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arXiv · 2204.03138

High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate

Oguz Tolga Celik·Christopher J. Sarabalis·Felix M. Mayor·Hubert S. Stokowski·Jason F. Herrmann·Timothy P. McKenna·Nathan R. A. Lee·Wentao Jiang·Kevin K. S. Multani·Amir H. Safavi-Naeini
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Abstract

Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics causes limited addressability of atoms and ions, and this remains an impediment on scalability and cost. Networks of Mach-Zehnder interferometers can overcome challenges in addressing atoms by providing high-bandwidth electro-optic control of multiple output beams. Here, we demonstrate a VNIR Mach-Zehnder interferometer on lithium niobate on sapphire with a CMOS voltage-level compatible full-swing voltage of 4.2 V and an electro-optic bandwidth of 2.7 GHz occupying only 0.35 mm$^2$. Our waveguides exhibit 1.6 dB/cm propagation loss and our microring resonators have intrinsic quality factors of 4.4 $\times$ 10$^5$. This specialized platform for VNIR integrated photonics can open new avenues for addressing large arrays of qubits with high precision and negligible cross-talk.

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Oguz Tolga Celik, Christopher J. Sarabalis, Felix M. Mayor, Hubert S. Stokowski, Jason F. Herrmann, Timothy P. McKenna, Nathan R. A. Lee, Wentao Jiang, Kevin K. S. Multani, Amir H. Safavi-Naeini. 2022-04-07. High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate. https://doi.org/10.1364/oe.460119

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