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arXiv · 2204.09295

Nuclear Spin Quantum Memory in Silicon Carbide

Benedikt Tissot·Michael Trupke·Philipp Koller·Thomas Astner·Guido Burkard
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Abstract

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long-time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.

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Benedikt Tissot, Michael Trupke, Philipp Koller, Thomas Astner, Guido Burkard. 2022-04-20. Nuclear Spin Quantum Memory in Silicon Carbide. https://doi.org/10.1103/physrevresearch.4.033107

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