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arXiv · 2204.13427

Electrically reduced optical switching threshold of VO2-based THz metasurface

V. E. Kaydashev·A. S. Slavich·I. K. Domaratskiy·S. S. Zhukov·R. Kirtaev·D. A. Mylnikov·M. E. Kutepov·E. M. Kaidashev
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Abstract

The VO2-based THz metasurface optical switching threshold is reduced by more than five orders of magnitude to 0.32-0.4 W/cm2 due to the supply of a subthreshold electric current. Moreover, additional deposition of Au nanoparticles can further reduce the threshold by 30% due to plasmonic effects. The proposed designs and a combined approach to controlling the sub-THz/THz transmission by electric current and light make it possible to overcome the existing bottleneck in design of dynamically programmable THz mirror array based on metasurfaces.

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V. E. Kaydashev, A. S. Slavich, I. K. Domaratskiy, S. S. Zhukov, R. Kirtaev, D. A. Mylnikov, M. E. Kutepov, E. M. Kaidashev. 2022-04-28. Electrically reduced optical switching threshold of VO2-based THz metasurface. https://arxiv.org/abs/2204.13427

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