arXiv subjects

V. E. Kaydashev

Publications and source records attributed to V. E. Kaydashev.

4 recordsLinked to original sources

arXiv2025

VO2 films grown on TiO2 sub-layer: influence of thickness on structural, electrical and optical properties

Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO2-based active metasurfaces are urgently needed however several important issues related to VO2 properties in VO2/TiO2/Al2O3 films should be thoroughly examined first. We study electrical, optical and structural properties of VO2 films as well as their composition and switching characteristics as function of the VO2 layer thickness in VO2/TiO2 composites. XRD analysis revealed an epitaxial growth of films with deformation of the monoclinic VO2 lattice to hexagonal symmetry. Reduced VO2 layer thickness from 170 nm to 20 nm results in increased phase transition temperature while the width of the resistance versus temperature hysteresis loop R(T) remains constant at ~6C for all VO2 thicknesses in the range of 20-170 nm. The resistance alteration ratio is reduced from 4.2e3 to 2.7e2 in thinner films. Raman spectra reveal a significant shift of VO2 lattice vibration modes for films thinner than 30 nm claiming a great structural strain whereas modes position for thicker VO2 layers are similar to those in bulk structure. Composition of VO2 films has revealed only a minor alteration of VO2/V2O5 phases ratio from 1.6 to 1.8 when the film thickness has been increased from 20 nm to 50 nm. Investigation of surface elemental composition and valence states of VO2 films revealed that VO2/V2O5 ratio remains practically unchanged with thickness reduction. The study of electrical MIT dynamics revealed the switching time of a 50 nm VO2 film to be as low as 800 ns.

cond-mat.mtrl-sci↗

arXiv2025

Surface acoustic waves to monitor active THz metagrating based on VO2

We theoretically propose a new approach to in-situ monitor the altered states of pixels in VO2 based active THz amplitude metagrating by using surface acoustic waves (SAWs) generated in LiNbO3 substrate. A single broadband RF response of the SAW device consists of N narrowband frequency channels which code the feedback information on the current pixels states. This way the resistance alteration due to metal-to-insulator transition of all VO2 based pixels of the active THz grating is monitored in advance even without incident radiation. The method provides important new options of monitoring a metasurface aging as well as incorrect switching related to technological defects. Using of the SAW device in all-electrically addressed VO2 based binary grating with tunable period as well as advanced gradient type gratings are modeled.

physics.optics↗

arXiv2022

Electrically reduced optical switching threshold of VO2-based THz metasurface

The VO2-based THz metasurface optical switching threshold is reduced by more than five orders of magnitude to 0.32-0.4 W/cm2 due to the supply of a subthreshold electric current. Moreover, additional deposition of Au nanoparticles can further reduce the threshold by 30% due to plasmonic effects. The proposed designs and a combined approach to controlling the sub-THz/THz transmission by electric current and light make it possible to overcome the existing bottleneck in design of dynamically programmable THz mirror array based on metasurfaces.

physics.optics↗

arXiv2013

Spin-polarized electronic structure of the core-shell ZnO/ZnO:Mn nanowires probed by x-ray absorption and emission spectroscopy

The combination of x-ray spectroscopy methods complemented with theoretical analysis unravels the coexistence of paramagnetic and antiferromagnetic phases in the Zn_0.9Mn_0.1O shell deposited onto array of wurtzite ZnO nanowires. The shell is crystalline with orientation toward the ZnO growth axis, as demonstrated by X-ray linear dichroism. EXAFS analysis confirmed that more than 90% of Mn atoms substituted Zn in the shell while fraction of secondary phases was below 10%. The value of manganese spin magnetic moment was estimated from the Mn Kβ X-ray emission spectroscopy to be 4.3μB which is close to the theoretical value for substitutional Mn_Zn. However the analysis of L_2,3 x-ray magnetic circular dichroism data showed paramagnetic behaviour with saturated spin magnetic moment value of 1.95μB as determined directly from the spin sum rule. After quantitative analysis employing atomic multiplet simulations such difference was explained by a coexistence of paramagnetic phase and local antiferromagnetic coupling of Mn magnetic moments. Finally, spin-polarized electron density of states was probed by the spin-resolved Mn K-edge XANES spectroscopy and consequently analyzed by band structure calculations.

cond-mat.mtrl-sci↗