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arXiv · 2205.10286

Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$

Alexander Hötger·Tomer Amit·Julian Klein·Katja Barthelmi·Thomas Pelini·Alex Delhomme·Sergio Rey·Marek Potemski·Clément Faugeras·Galit Cohen·Daniel Hernangómez-Pérez·Takashi Taniguchi·Kenji Watanabe·Christoph Kastl·Jonathan J. Finley·Sivan Refaely-Abramson·Alexander W. Holleitner·Andreas V. Stier
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Abstract

Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of $\sim$ 3.5 nm. The distinct valley-Zeeman splitting in out-of-plane $B$-fields and the brightening of dark states through in-plane $B$-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.

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Alexander Hötger, Tomer Amit, Julian Klein, Katja Barthelmi, Thomas Pelini, Alex Delhomme, Sergio Rey, Marek Potemski, Clément Faugeras, Galit Cohen, Daniel Hernangómez-Pérez, Takashi Taniguchi, Kenji Watanabe, Christoph Kastl, Jonathan J. Finley, Sivan Refaely-Abramson, Alexander W. Holleitner, Andreas V. Stier. 2022-05-20. Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$. https://doi.org/10.1038/s41699-023-00392-2

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