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arXiv · 2206.00306

Scattering anisotropy in HgTe (013) quantum well

D. A. Khudaiberdiev·M. L. Savchenko·D. A. Kozlov·N. N. Mikhailov·Z. D. Kvon
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Abstract

We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown.

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D. A. Khudaiberdiev, M. L. Savchenko, D. A. Kozlov, N. N. Mikhailov, Z. D. Kvon. 2022-06-01. Scattering anisotropy in HgTe (013) quantum well. https://doi.org/10.1063/5.0101932

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