Engineering transistor-like optical gain in two-dimensional materials with Berry curvature dipoles

Abstract

Semiconductor transistors are essential elements of electronic circuits as they enable, for example, the isolation or amplification of voltage signals. While conventional transistors are point-type (lumped-element) devices, it may be highly interesting to realize a distributed transistor-type optical response in a bulk material. Here, we show that low-symmetry two-dimensional metallic systems may be the ideal solution to implement such a distributed-transistor response. To this end, using the semiclassical Boltzmann equation approach, we characterize the optical conductivity of a two-dimensional material under a static electric bias. It is found that similar to the nonlinear Hall effect, the electron transport depends on the Berry curvature dipole. Our analysis reveals that the electro-optic effect modifies the optical conductivity of the material, breaking the electromagnetic reciprocity and yielding a dynamical response that imitates that of a transistor but in a distributed volume. Furthermore, the effective conductivity tensor can be non-Hermitian, opening the possibility of optical gain. To maximize the non-Hermitian response, we explore the specific case of strained twisted bilayer graphene. Our analysis reveals that the optical gain for incident light transmitted through the biased system depends on the light polarization, and can be quite large, especially for multilayer configurations.