Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

Swapnil M. Mhatre; Ngoc Thanh Mai Tran; Heather M. Hill; Ching-Chen Yeh; Dipanjan Saha; David B. Newell; Angela R. Hight Walker; Chi-Te Liang; Randolph E. Elmquist; Albert F. Rigosi

arXiv · 2206.05098

Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

Swapnil M. Mhatre·Ngoc Thanh Mai Tran·Heather M. Hill·Ching-Chen Yeh·Dipanjan Saha·David B. Newell·Angela R. Hight Walker·Chi-Te Liang·Randolph E. Elmquist·Albert F. Rigosi

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Abstract

In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $\nu$ = 2 Landau level. With the demonstrations herein of devices having multiple outputs of quantized values available simultaneously, these versatile devices can be used to disseminate the ohm globally. Such devices are designed to give access to quantized resistance values over the range of three orders of magnitude, starting as low as the standard value of approximately 12.9 k$\Omega$ and reaching as high as 1.29 M$\Omega$. Several experimental methods are used to assess the quality and versatility of the devices, including standard lock-in techniques and Raman spectroscopy.

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Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Ching-Chen Yeh, Dipanjan Saha, David B. Newell, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, Albert F. Rigosi. 2022-06-10. Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs. https://arxiv.org/abs/2206.05098

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