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arXiv · 2206.05746

Gate-tunable, superconductor-semiconductor parametric amplifier

D. Phan·P. Falthansl-Scheinecker·U. Mishra·W. M. Strickland·D. Langone·J. Shabani·A. P. Higginbotham
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Abstract

We have built a parametric amplifier with a Josephson field effect transistor (JoFET) as the active element. The device's resonant frequency is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1 dB compression point of -125.5 dBm when operated at a fixed resonance frequency.

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D. Phan, P. Falthansl-Scheinecker, U. Mishra, W. M. Strickland, D. Langone, J. Shabani, A. P. Higginbotham. 2022-06-12. Gate-tunable, superconductor-semiconductor parametric amplifier. https://doi.org/10.1103/physrevapplied.19.064032

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