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arXiv · 2206.11067

Magnetic topological transistor exploiting layer-selective transport

Hai-Peng Sun·Chang-An Li·Sang-Jun Choi·Song-Bo Zhang·Hai-Zhou Lu·Björn Trauzettel
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Abstract

We propose a magnetic topological transistor based on MnBi$_{2}$Te$_{4}$, in which the "on" state (quantized conductance) and the "off" state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi$_{2}$Te$_{4}$. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off" states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi$_{2}$Te$_{4}$.

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Hai-Peng Sun, Chang-An Li, Sang-Jun Choi, Song-Bo Zhang, Hai-Zhou Lu, Björn Trauzettel. 2022-06-22. Magnetic topological transistor exploiting layer-selective transport. https://doi.org/10.1103/physrevresearch.5.013179

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