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arXiv · 2207.02520

Evidence of boron pairs in highly boron laser doped silicon

Léonard Desvignes·Francesca Chiodi·Géraldine Hallais·Dominique Débarre·Giacomo Priante·Feng Liao·Guilhem Pacot·Bernard Sermage
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Abstract

Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with BCl3, followed by nanosecond laser anneal (Gas Immersion Laser Doping). The boron concentration varies thus nearly linearly with the number of process repetitions. However, it is not the case for the hole concentration which tends to saturate at high boron concentration. The difference between boron and hole concentration increases as the square of boron concentration, pointing towards the formation of boron pairs as the dominant contribution to the increase of inactive boron.

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Léonard Desvignes, Francesca Chiodi, Géraldine Hallais, Dominique Débarre, Giacomo Priante, Feng Liao, Guilhem Pacot, Bernard Sermage. 2022-07-06. Evidence of boron pairs in highly boron laser doped silicon. https://arxiv.org/abs/2207.02520

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