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arXiv · 2207.10972

A quantum electromechanical interface for long-lived phonons

Alkim Bozkurt·Han Zhao·Chaitali Joshi·Henry G. LeDuc·Peter K. Day·Mohammad Mirhosseini
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Abstract

Controlling long-lived mechanical oscillators in the quantum regime holds promises for quantum information processing. Here, we present an electromechanical system capable of operating in the GHz-frequency band in a silicon-on-insulator platform. Relying on a novel driving scheme based on an electrostatic field and high-impedance microwave cavities based on TiN superinductors, we are able to demonstrate a parametrically-enhanced electromechanical coupling of ${g/2 \pi} = 1.1$ MHz, sufficient to enter the strong-coupling regime with a cooperativity of $\mathcal{C} = 1200$. The absence of piezoelectric materials in our platform leads to long mechanical lifetimes, finding intrinsic values up to $\tau_\text{d} = 265~ \mu$s ($Q = 8.4 \times {10}^6$ at $\omega_\mathrm{m}/2\pi = 5$ GHz) measured at low-phonon numbers and millikelvin temperatures. Despite the strong parametric drives, we find the cavity-mechanics system in the quantum ground state by performing sideband thermometry measurements. Simultaneously achieving ground-state operation, long mechanical lifetimes, and strong coupling sets the stage for employing silicon electromechanical resonators as memory elements and transducers in hybrid quantum systems, and as a tool for probing the origins of acoustic loss in the quantum regime.

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Alkim Bozkurt, Han Zhao, Chaitali Joshi, Henry G. LeDuc, Peter K. Day, Mohammad Mirhosseini. 2022-07-22. A quantum electromechanical interface for long-lived phonons. https://arxiv.org/abs/2207.10972

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