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arXiv · 2207.14427

Electrically function switchable magnetic domain-wall memory

Yu Sheng·Weiyang Wang·Yongcheng Deng·Yang Ji·Houzhi Zheng·Kaiyou Wang
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Abstract

More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data from being tampered with. However, no such switchable memory has been reported. We demonstrated the rewritable function can be converted into a read-only function by a sufficiently large current pulse in a U-shaped domain-wall memory composed of an asymmetric Pt/Co/Ru/AlOx heterostructure with strong Dzyaloshinskii-Moriya interaction. Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2 substrate were designed and fabricated. Furthermore, we confirmed the information can be stored in rewritable or read-only state at bit-level according to the security-needs of end-users. Our work not only provides a solution for personal confidential data, but also paves the way for developing multi-functional spintronic devices.

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Yu Sheng, Weiyang Wang, Yongcheng Deng, Yang Ji, Houzhi Zheng, Kaiyou Wang. 2022-07-29. Electrically function switchable magnetic domain-wall memory. https://arxiv.org/abs/2207.14427

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