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arXiv · 2209.11641

Energy transfer from tunneling electrons to excitons

Sotirios Papadopoulos·Lujun Wang·Takashi Taniguchi·Kenji Watanabe·Lukas Novotny
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Abstract

Excitons in optoelectronic devices have been generated through optical excitation, external carrier injection, or employing pre-existing charges. Here, we reveal a new way to electrically generate excitons in transition metal dichalcogenides (TMDs). The TMD is placed on top of a gold-hBN-graphene tunnel junction, outside of the tunneling pathway. This electrically driven device features a photoemission spectrum with a distinct peak at the exciton energy of the TMD. We interpret this observation as exciton generation by energy transfer from tunneling electrons, which is further supported by a theoretical model based on inelastic electron tunneling. Our findings introduce a new paradigm for exciton creation in van der Waals heterostructures and provide inspiration for a new class of optoelectronic devices in which the optically active material is separated from the electrical pathway.

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Sotirios Papadopoulos, Lujun Wang, Takashi Taniguchi, Kenji Watanabe, Lukas Novotny. 2022-09-23. Energy transfer from tunneling electrons to excitons. https://arxiv.org/abs/2209.11641

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