arXiv subjects

Sotirios Papadopoulos

Publications and source records attributed to Sotirios Papadopoulos.

8 recordsLinked to original sources

arXiv2026

Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene

Heterostructures made from atomically thin semiconductors (here MoSe$_2$) and graphene are uniquely poised to investigate photoinduced charge and energy transfer in the 2D limit. Here, using picosecond time-resolved photoluminescence spectroscopy at cryogenic temperatures on two types of MoSe$_2$/graphene heterostrutures, we unveil key features of the underlying mechanisms. First, the shortening of the MoSe$_2$ bright exciton lifetime is marginally affected by the number of graphene layers to which MoSe$_2$ is coupled. Second, exciton transfer vanishes when a sub-nm thick spacer of hexagonal boron nitride decouples MoSe$_2$ from graphene. These results indicate that charge tunneling govern bright exciton relaxation in MoSe$_2$/graphene and that longer-range, F\"orster-type energy transfer (FRET) does not affect bright excitons. However, sub-ps FRET to graphene accelerates the relaxation of ``hot'' excitons formed upon optical excitation, leading to photoluminescence quenching factors that exceed expectations based on the shortening of the bright exciton lifetime. Our work has direct implications for energy harvesting and funneling using van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2025

Atomically-resolved exciton emission from single defects in MoS$_2$

Understanding how atomic defects shape the nanoscale optical properties of two-dimensional (2D) semiconductors is essential for advancing quantum technologies and optoelectronics. Using scanning tunneling spectroscopy (STS) and luminescence (STML), we correlate the atomic structure and optical fingerprints of individual defects in monolayer MoS$_2$. A bilayer of hexagonal boron nitride (hBN) effectively decouples MoS$_2$ from the graphene substrate, increasing its band gap and extending the defect charge state lifetime. This enables the observation of sharp STML emission lines from MoS$_2$ excitons and trions exhibiting nanoscale sensitivity to local potential fluctuations. We identify the optical signatures of common point defects in MoS$_2$: sulfur vacancies (Vac$_\text{S}^-$), oxygen substitutions (O$_\text{S}$), and negatively charged carbon-hydrogen complexes (CH$_\text{S}^-$). While Vac$_\text{S}^-$ and O$_\text{S}$ only suppress pristine excitonic emission, CH$_\text{S}^-$ generate defect-bound exciton complexes ($A^-X$) about 200\,meV below the MoS$_2$ exciton. Sub-nanometer-resolved STML maps reveal large spectral shifts near charged defects, concurrent with the local band bending expected for band-to-defect optical transitions. These results establish an atomically precise correlation between structure, electronic states, and optical response, enabling deterministic engineering of quantum emitters in 2D materials.

cond-mat.mtrl-sci↗

arXiv2025

Photonics in Flatland: Challenges and Opportunities for Nanophotonics with 2D Semiconductors

Two-dimensional (2D) semiconductors are emerging as a versatile platform for nanophotonics, offering unprecedented tunability in optical properties through exciton resonance engineering, van der Waals heterostructuring, and external field control. These materials enable active optical modulation, single-photon emission, quantum photonics, and valleytronic functionalities, paving the way for next-generation optoelectronic and quantum photonic devices. However, key challenges remain in achieving large-area integration, maintaining excitonic coherence, and optimizing amplitude-phase modulation for efficient light manipulation. Advances in fabrication, strain engineering, and computational modelling will be crucial to overcoming these limitations. This perspective highlights recent progress in 2D semiconductor-based nanophotonics, emphasizing opportunities for scalable integration into photonics.

physics.optics↗

arXiv2025

All-electrical near-field injection of excitons in a van der Waals antiferromagnet

Van der Waals materials have become a promising building block for future electronics and photonics. The two-dimensional magnet CrSBr came into the spotlight of solid state research due to its intriguing combination of antiferromagnetic order, strong light-matter coupling and unusual quasi-1D electronic bandstructure. This study reports the electrical excitation of excitons in CrSBr layers from cryogenic temperatures up to room temperature. By exploiting the energy transfer via tunneling electrons in a graphene tunnel junction strongly bound excitons are excited in proximate CrSBr layers. This facilitates electrically-excited emission from CrSBr crystals ranging in thickness from a bilayer up to 250 nm, in which the strong linear polarization of the electroluminescence confirms the excitonic origin. For thicker layers, clear evidence for the electrically excited emission from self-hybridized exciton polaritons is observed, highlighting the strong coupling between optical excitations and confined photon modes in CrSBr. These results pave the way for future applications in spintronic and optical readout of magnetic properties.

cond-mat.mes-hall↗

arXiv2023

Exciton-assisted electron tunneling in van der Waals heterostructures

The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage ($I-V$) measurements. These features can be explained by direct electron-phonon or electron-defect interactions. Here, we use a novel tunneling process that involves excitons in transition metal dichalcogenides (TMDs). We study tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) with an adjacent TMD monolayer and observe prominent resonant features in $I-V$ measurements. These resonances appear at bias voltages that correspond to TMD exciton energies. By placing the TMD outside of the tunneling pathway, we demonstrate that this phonon-exciton mediated tunneling process does not require any charge injection into the TMD. This work demonstrates the appearance of optical modes in electrical transport measurements and introduces a new functionality for optoelectronic devices based on van der Waals materials.

cond-mat.mes-hall↗

arXiv2023

Overbias photon emission from light-emitting devices based on monolayer transition metal dichalcogenides

Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other 2D materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emission at photon energies higher than the applied electrostatic potential, so-called overbias emission. Here we report overbias emission for potentials that are near half of the optical bandgap energy in TMD-based tunneling LEDs. We show that this emission is not thermal in nature, but consistent with exciton generation via a two-electron coherent tunneling process.

cond-mat.mes-hall↗

arXiv2022

Energy transfer from tunneling electrons to excitons

Excitons in optoelectronic devices have been generated through optical excitation, external carrier injection, or employing pre-existing charges. Here, we reveal a new way to electrically generate excitons in transition metal dichalcogenides (TMDs). The TMD is placed on top of a gold-hBN-graphene tunnel junction, outside of the tunneling pathway. This electrically driven device features a photoemission spectrum with a distinct peak at the exciton energy of the TMD. We interpret this observation as exciton generation by energy transfer from tunneling electrons, which is further supported by a theoretical model based on inelastic electron tunneling. Our findings introduce a new paradigm for exciton creation in van der Waals heterostructures and provide inspiration for a new class of optoelectronic devices in which the optically active material is separated from the electrical pathway.

cond-mat.mes-hall↗

arXiv2019

Beam steering with a nonlinear optical phased array antenna

Transition metal dichalcogenides (TMDCs) exhibit high second harmonic (SH) generation in the visible due to their non-centrosymmetric crystal structure in odd-layered form and direct bandgap transition when thinned down to a monolayer. In order to emit the SH radiation into a desired direction one requires a means to control the phase of the in-plane nonlinear polarization. Here, we couple the SH response of a monolayer MoS$_{\text{2}}$ to an optical phased array antenna and demonstrate controllable steering of the nonlinear emission. By exploiting the intrinsic SH generation by the phased array antenna we achieve uniform emission efficiency into a broad angular range. Our work has relevance for novel optoelectronic applications, such as programmable optical interconnects and on-chip LIDAR.

physics.optics↗