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arXiv · 2209.14242

Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm

Ekaterina Ponizovskaya-Devine·Ahmed S. Mayet·Amita Rawat·Ahasan Ahamed·Shih-Yuan Wang·Aly F. Elrefaie·Toshishige Yamada·M. Saif Islam
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Abstract

We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical efficiency and extend the range to the 1.7 microns wavelength. We demonstrate an optimization for the width and depth of the nano-holes for maximal absorption in the near infrared. We show a reduction in cross-talk by employing thin Si oxide deep trench isolation in between the pixels. Finally, we show a 26-50 percent reduction in the device capacitance with the introduction of a hole. Such CMOS-compatible Ge-on_Si sensor will enable high-density, ultra-fast and efficient near-infrared imaging.

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Ekaterina Ponizovskaya-Devine, Ahmed S. Mayet, Amita Rawat, Ahasan Ahamed, Shih-Yuan Wang, Aly F. Elrefaie, Toshishige Yamada, M. Saif Islam. 2022-09-11. Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm. https://arxiv.org/abs/2209.14242

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