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arXiv · 2210.14058

Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Ana Estrada-Real·Ioannis Paradisanos·Peter R. Wiecha·Jean-Marie Poumirol·Aurelien Cuche·Gonzague Agez·Delphine Lagarde·Xavier Marie·Vincent Larrey·Jonas Müller·Guilhem Larrieu·Vincent Paillard·Bernhard Urbaszek
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Abstract

Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment.

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BibTeXRIS

Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha, Jean-Marie Poumirol, Aurelien Cuche, Gonzague Agez, Delphine Lagarde, Xavier Marie, Vincent Larrey, Jonas Müller, Guilhem Larrieu, Vincent Paillard, Bernhard Urbaszek. 2022-10-25. Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors. https://doi.org/10.1038/s42005-023-01211-2

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