arXiv subjects

Jean-Marie Poumirol

Publications and source records attributed to Jean-Marie Poumirol.

17 recordsLinked to original sources

arXiv2026

Emergence of Localized Surface Plasmons in Unpatterned Hyperdoped Polycrystalline Silicon

The ability to engineer localized surface plasmon resonances at large scale usually relies on precise nanoscale patterning. Here, we demonstrate that mid-infrared plasmonic responses can instead emerge in unpatterned polysilicon films composed of nanometric (5-50 nm) grains, challenging established design paradigms and eliminating the need for external nanostructuring. Using tailored out-of-equilibrium annealing conditions, we show that hyperdoped polysilicon layers exhibit enhanced light-matter interactions that can be tuned across the mid-infrared range. By combining advanced electron microscopy, infrared spectroscopy and finite-difference time-domain electrodynamic simulations, we demonstrate that these remarkable optical properties originate from naturally formed metal-dielectric interfaces at grain boundaries, which support localized surface plasmon resonances. Importantly, this result is universal and can be extended to any doped semiconductor system, regardless of the synthesis technique, provided that the grain size remains in the nanometric range. This work opens up a new field in plasmonics centered on polycrystalline semiconductors, paving the way for cost-effective systems that are fully compatible with microelectronic and photovoltaic technologies, and capable of significantly reshaping light-matter interactions in the infrared range.

physics.optics↗

arXiv2025

Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers

Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emission that aligns with Mie-resonant modes. Raman spectroscopy reveals an up to 8-fold enhancement in the vibrational modes of MoS2, while second-harmonic generation exhibits a 20 to 30-fold increase in efficiency, closely correlating with the presence of the underlying nanoantennas. Our experiments and simulations quantify the tunable benefits of the near-field interactions, taking into account thin-film interference and strain-induced effects. Our findings present dielectric nanoantennas as a promising platform for tailoring linear and nonlinear optical properties in 2D materials, with potential applications in nanophotonic devices and integrated photonics.

physics.optics↗

arXiv2023

Directional silicon nano-antennas for quantum emitter control designed by evolutionary optimization

We optimize silicon nano-antennas to enhance and steer the emission of local quantum sources. We combine global evolutionary optimization (EO) with frequency domain electrodynamical simulations, and compare design strategies based on resonant and non-resonant building blocks. Specifically, we investigate the performance of models with different degrees of freedom but comparable amount of available material. We find that simpler geometric models allow significantly faster convergence of the optimizer, which, expectedly, comes at the cost of a reduced optical performance. We finally analyze the physical mechanisms underlying the directional emission that also comes with an emission rate enhancement, and find a surprising robustness against perturbations of the source emitter location. This makes the structures highly interesting for actual nano-fabrication. We believe that optimized, all-dielectric silicon nano-antennas have high potential for genuine breakthroughs in a multitude of applications in nanophotonics and quantum technologies.

physics.optics↗

arXiv2023

Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction

Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.

cond-mat.mes-hall↗

arXiv2023

Control of light emission of quantum emitters coupled to silicon nanoantenna using cylindrical vector beams

Light emission of europium (Eu3+) ions placed in the vicinity of optically resonant nanoantennas is usually controlled by tailoring the local density of photon states (LDOS). We show that the polarization and shape of the excitation beam can also be used to manipulate light emission, as azimuthally or radially polarized cylindrical vector beam offers to spatially shape the electric and magnetic fields, in addition to the effect of silicon nanorings (Si-NRs) used as nanoantennas. The photoluminescence mappings of the Eu3+ transitions and the Si phonon mappings are strongly dependent of both the excitation beam and the Si-NR dimensions. The experimental results of Raman scattering and photoluminescence are confirmed by numerical simulations of the near-field intensity in the Si nanoantenna and in the Eu3+-doped film, respectively. The branching ratios obtained from the experimental PL maps also reveal a redistribution of the electric and magnetic emission channels. Our results show that it is possible to spatially control both electric and magnetic dipolar emission of Eu3+ ions by switching the laser beam polarization, hence the near-field at the excitation wavelength, and the electric and magnetic LDOS at the emission wavelength. This paves the way for optimized geometries taking advantage of both excitation and emission processes.

physics.optics↗

arXiv2022

Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment.

physics.optics↗

arXiv2022

Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime

Using Localized Surface Plasmon Resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precision of a few atoms. We demonstrate that LSP resonances can be supported with only about 10 free electrons per nanocrystal, confirming theoretical predictions and probing the limit of the collective nature of plasmons. We reveal a phenomenon, unique to embedded nanocrystals, with the appearance of an avoided crossing behavior linked to the hybridization between the localized surface plasmon in the doped nanocrystals and the silica matrix phonon modes. Finally, a careful analysis of the scattering time dependence versus carrier density in the small size regime allows us to detect the appearance of a new scattering process at high dopant concentration.

physics.optics↗

arXiv2022

Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed.

cond-mat.mtrl-sci↗

arXiv2021

Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics

We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $μ$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasurfaces employing nano-structures with dimensions as low as 100\,nm in diameter and 23 nm in height. Our numerical simulations show an excellent agreement with the experimental data and provide physical insights on the impact of the nanostructure shape as well as of near-field effects on the optical properties of the metasurface. Our results open highly promising perspectives for integrated all-silicon-based plasmonic devices for instance for chemical or biological sensing or for thermal imaging.

cond-mat.mes-hall↗

arXiv2020

Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas

Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence mapping experiments. By varying TMD material (WSe2 versus MoSe2) transferred on silicon nanoresonators with various designs (planarized versus non-planarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2 we address the effects of Mie Resonances and strain in the monolayer. For WSe2 an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room temperature applications.

cond-mat.mes-hall↗

arXiv2019

High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces

Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modelling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon-phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope.

cond-mat.str-el↗

arXiv2017

Magnetoplasmonic Enhancement of Faraday Rotation in Patterned Graphene Metasurfaces

Faraday rotation is a fundamental property present in all non-reciprocal optical elements. In the THz range, graphene displays strong Faraday rotation; unfortunately, it is limited to frequencies below the cyclotron resonance. Here we show experimentally that in specifically design metasurfaces, magneto-plasmons can be used to circumvent this limitation. We find excellent agreement between theory and experiment and provide new physical insights and predictions on these phenomena. Finally, we demonstrate strong tuneability in these metasurfaces using electric and magnetic field biasing.

cond-mat.mes-hall↗

arXiv2017

Electrically controlled terahertz magneto-optical phenomena in continuous and patterned graphene

The magnetic circular dichroism and the Faraday rotation are the fundamental phenomena of great practical importance arising from the breaking of the time reversal symmetry by a magnetic field. In most materials the strength and the sign of these effects can be only controlled by the field value and its orientation. Furthermore, the terahertz range is lacking materials having the ability to affect the polarisation state of the light in a non-reciprocal manner. Here we demonstrate, using broadband terahertz magneto-electro-optical spectroscopy, that in graphene both the magnetic circular dichroism and the Faraday rotation can be modulated in intensity, tuned in frequency and, importantly, inverted using only electrostatic doping at a fixed magnetic field. In addition, we observe strong magneto-plasmonic resonances in a patterned array of graphene antidots, which potentially allows exploiting these magneto-optical phenomena in a broad THz range.

cond-mat.mes-hall↗

arXiv2016

Suppressed magnetic circular dichroism and valley-selective magneto-absorption due to the effective mass anisotropy in bismuth

We have measured the far-infrared reflectivity and Kerr angle spectra on a high-quality crystal of pure semimetallic bismuth as a function of magnetic field, from which we extract the conductivity for left- and right handed circular polarisations. The high spectral resolution allows us to separate the intraband Landau level transitions for electrons and holes. The hole transition exhibits 100% magnetic circular dichroism, it appears only for one polarisation as expected for a circular cyclotron orbit. However the dichroism for electron transitions is reduced to only $13\pm 1$%, which is quantitatively explained by the large effective mass anisotropy of the electron pockets of the Fermi surface. This observation is a signature of the mismatch between the metric experienced by the photons and the electrons. It allows for a contactless measurement of the effective mass anisotropy and provides a direction towards valley polarised magneto-optical pumping with elliptically polarised light.

cond-mat.mes-hall↗

arXiv2011

Unveiling the Landau Levels Structure of Graphene Nanoribbons

Magnetotransport measurements are performed in ultraclean (lithographically patterned) graphene nanoribbons down to 70 nm. At high magnetic fields, a fragmentation of the electronic spectrum into a Landau levels pattern with unusual features is unveiled. The singular Landau spectrum reveals large magneto-oscillations of the Fermi energy and valley degeneracy lifting. Quantum simulations suggest some disorder threshold at the origin of mixing between opposite chiral magnetic edge states and disappearance of quantum Hall effect.

cond-mat.mes-hall↗

arXiv2010

High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite

We report on the investigation of magnetic field induced charge density wave and Hall coefficient sign reversal in a quasi-two dimensional electronic system of highly oriented pyrolytic graphite under very strong magnetic field. The change of Hall sign coefficient from negative to positive occurs at low temperature and high magnetic field just after the charge density wave transition, suggesting the role of hole-like quasi-particles in this effect. Angular dependent measurements show that the charge density wave transition and Hall sign reversal fields follow the magnetic field component along the c-axis of graphite.

cond-mat.mes-hall↗

arXiv2010

Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons

We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).

cond-mat.mes-hall↗