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arXiv · 2211.02135

Widely tunable 2 $\mu$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector

Nouman Zia·Samu-Pekka Ojanen·Jukka Viheriala·Eero Koivusalo·Joonas Hilska·Mircea Guina
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Abstract

Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic integrated circuits offers an attractive platform. Herein, we exploit the low-loss features of Si$_3$N$_4$ waveguides and demonstrate a hybrid laser comprising a GaSb gain chip with an integrated tunable Si$_3$N$_4$ Vernier mirror. At room temperature, the laser exhibited a maximum output power of 15 mW and a tuning range of 80 nm (1937-2017 nm). The low-loss performance of several fundamental Si$_3$N$_4$ building blocks for photonic integrated circuits is also validated. More specifically, the single-mode waveguide exhibit transmission loss as low as 0.15 dB/cm, the 90$^\circ$ bend has 0.008 dB loss, and the 50/50 Y-branch has an insertion loss of 0.075 dB.

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Nouman Zia, Samu-Pekka Ojanen, Jukka Viheriala, Eero Koivusalo, Joonas Hilska, Mircea Guina. 2022-11-03. Widely tunable 2 $\mu$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector. https://doi.org/10.1364/ol.480867

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