Valleytronics in bulk MoS$_2$ by optical control of parity and time symmetries

Abstract

The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are symmetry conditions that require monolayer structures or specific material engineering, non-resonant optical control to avoid energy dissipation, and the ability to switch valley polarization at optical speed. We demonstrate all-optical and non-resonant control over valley polarization using bulk MoS$_2$, a centrosymmetric material with zero Berry curvature at the valleys. Our universal method utilizes spin-angular momentum-shaped tri-foil optical control pulses to switch the material's electronic topology to induce valley polarization by transiently breaking time and space inversion symmetry through a simple phase rotation. The dependence of the generation of the second harmonic of an optical probe pulse on the phase rotation directly demonstrates the efficacy of valley polarization. It shows that direct optical control over the valley degree of freedom is not limited to monolayer structures. Instead, it is possible for systems with an arbitrary number of layers and bulk materials. Universal and non-resonant valley control at optical speeds unlocks the possibility of engineering efficient, multi-material valleytronic devices operating on quantum coherent timescales.