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arXiv · 2303.15646

7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Yibo Xu·Vijay Gopal Thirupakuzi Vangipuram·Vishank Telasara·Junao Cheng·Yuxuan Zhang·Tadao Hashimoto·Edward Letts·Daryl Key·Hongping Zhao·Wu Lu
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Abstract

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high dielectric constant (high-k) dielectrics for electrical field management and high breakdown voltages, in together with guard-rings and a field plate. The fabricated diodes with a 57 um thick drift layer demonstrated a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mohm.cm2 and a Baliga figure of merit of 22 GW/cm2.

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Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara, Junao Cheng, Yuxuan Zhang, Tadao Hashimoto, Edward Letts, Daryl Key, Hongping Zhao, Wu Lu. 2023-03-28. 7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management. https://arxiv.org/abs/2303.15646

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