arXiv · 2303.16290
Two-step flux synthesis of ultrapure transition metal dichalcogenides
Abstract
Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements of monolayer WSe2 yield room-temperature hole mobility above 840 cm2/Vs and low-temperature disorder-limited mobility above 44,000 cm2/Vs. Electrical transport measurements of graphene-WSe2 heterostructures fabricated from the two-step flux grown WSe2 also show superior performance: higher graphene mobility, lower charged impurity density, and well-resolved integer quantum Hall states.
Explore related subjects
Keep this discovery
Song Liu, Yang Liu, Luke Nemetz Holtzman, Baichang Li, Madisen Holbrook, Jordan Pack, Takashi Taniguchi, Kenji Watanabe, Cory R. Dean, Abhay Pasupathy, Katayun Barmak, Daniel A. Rhodes, James Hone. 2023-03-28. Two-step flux synthesis of ultrapure transition metal dichalcogenides. https://arxiv.org/abs/2303.16290
Cite the original work for its findings. Save a collection to share your selection of sources.