arXiv subjects

Abhay Pasupathy

Publications and source records attributed to Abhay Pasupathy.

At least 19 recordsLinked to original sources

arXiv2026

Proximity-induced charge transfer, strain and magnetic exchange in graphene/CrSBr heterostructure

Stacking van der Waals materials provides a powerful route to engineer emergent electronic and magnetic behaviors through proximity-driven interactions. The graphene/CrSBr heterostructure has emerged as a compelling platform in this frontier, exhibiting exotic macroscopic responses-- including uniaxial surface-plasmon-polariton propagation and an unconventional quantum Hall effect-- indicative of strong interfacial electronic and magnetic coupling. However, a microscopic electronic landscape governing these phenomena has remained elusive. Here, we provide a comprehensive spectroscopic characterization of the graphene/CrSBr interface using a combination of angle-resolved photoemission spectroscopy (ARPES), low-energy electron microscopy (LEEM), and density functional theory. We resolve a massive redistribution of interfacial charge that concurrently hole dopes graphene and populates the quasi-one-dimensional spin-polarized conduction band of CrSBr, resulting insulator-to-metal transition in the interfacial CrSBr layer. Furthermore, electronic structure of CrSBr exhibits strong momentum-dependent renormalization distinct from conventional charge doping, and theoretical modeling supported by Raman spectroscopy points to additional interfacial compressive strain. In addition, ARPES reveals a splitting-like feature in the graphene Dirac cone consistent with spin degeneracy lifting, providing possible evidence of magnetic proximity coupling. These findings provide crucial microscopic insight into the system's optical and transport responses and establish graphene/CrSBr as a versatile platform for charge-transfer control, strain-driven band engineering, magnetic-proximity coupling, and directionally confined excitations for next-generation spintronic and nanophotonic devices.

cond-mat.str-el↗

arXiv2025

Angle evolution of the superconducting phase diagram in twisted bilayer WSe2

Recent observations of superconductivity in twisted bilayer WSe$_2$ have extended the family of moiré superconductors beyond twisted graphene. In WSe$_2$ two different twist angles were studied, 3.65° and 5.0°, and two seemingly distinct superconducting phase diagrams were reported, raising the question of whether the superconducting phases in the two devices share a similar origin. Here we address the question by experimentally mapping the evolution of the phase diagram across devices with twist angles spanning the range defined by the initial reports, and comparing the results to twist angle-dependent theory. We find that the superconducting state evolves smoothly with twist angle and at all twist angles is proximal to a Fermi surface reconstruction with, presumably, antiferromagnetic ordering, but is neither necessarily tied to the Van Hove singularity, nor to the half band insulator. Our results connect the previously distinct phase diagrams at 3.65° and 5°, and offer new insight into the origin of the superconductivity in this system and its evolution as the correlation strength increases. More broadly, the smooth phase diagram evolution, repeatability between different devices, and dynamic gate tunability within each device, establish twisted transition metal dichalcogenides as a unique platform for the study of correlated phases as the ratio of interaction strength to bandwidth is varied.

cond-mat.mes-hall↗

arXiv2025

Supersonic flow and hydraulic jump in an electronic de Laval nozzle

In very clean solid-state systems, where carrier-carrier interactions dominate over any other scattering mechanisms, the flow of electrons can be described within a hydrodynamic framework. In these cases, analogues of viscous fluid phenomena have been experimentally observed. However, experimental studies of electron hydrodynamics have so far been limited to the low velocity, linear response regime. At velocities approaching the speed of sound, the electronic fluid is expected to exhibit compressible behaviour where nonlinear effects and discontinuities such as shocks and choked flow have long been predicted. This compressible regime remains unexplored in electronic systems, despite its promise of strongly nonlinear flow phenomena. Here, we demonstrate compressible electron flow in bilayer graphene through an electronic de Laval nozzle, a structure that accelerates charge carriers past the electronic speed of sound, until they slow down suddenly in a shock. Discontinuities in transport measurements and local flattening of potential in Kelvin probe measurements are consistent with a viscous electron shock front and the presence of supersonic electron flow, and are not consistent with Ohmic or ballistic flow. Breaking the sound barrier in electron liquids opens the door for novel, intrinsically nonlinear electronic devices beyond the paradigm of incompressible flow.

cond-mat.mes-hall↗

arXiv2025

A Practical Flake Segmentation and Indexing Pipeline for Automated 2D Material Stacking

A cost-effective and robust image-processing pipeline is presented for the detection and characterization of exfoliated two-dimensional (2D) material flakes in optical microscope images, designed to facilitate automation in van der Waals heterostructure assembly. The system combines shallow machine learning (ML)-based material classification with a precision-first flake detection algorithm driven by edge morphology and color discontinuity. Step edges are resolved when supported by optical contrast, while spurious features such as dust and background texture are reliably rejected. Each identified flake is exported in a structured format that includes centroid coordinates, bounding geometries, average RGB color, and estimated optical thickness, enabling seamless integration into automated pick-up and stacking workflows. The pipeline is hardware-light and operates without the need for deep learning models or nanoscale ground-truth labels, making it practical for scalable front-end wafer processing at a hardware cost of under 30,000 USD. In contrast to prior approaches that focus solely on detection accuracy, the proposed system unifies flake segmentation with indexing, filtering, and blueprint-driven stacking, forming a closed-loop workflow from image acquisition to device planning. Its low annotation requirement and flexible implementation enable rapid deployment across diverse 2D material systems and imaging conditions.

cond-mat.mes-hall↗

arXiv2025

Imaging van Hove Singularity Heterogeneity in Overdoped Graphene

Tuning the chemical potential of a solid to the vicinity of a van Hove singularity (vHS) is a well-established route to discovering emergent quantum phases. In monolayer graphene, the use of electron-donating metal layers has recently emerged as a method to dope the chemical potential to the nearest vHS, as evidenced by Angle-Resolved Photoemission Spectroscopy (ARPES) measurements. In this work, we study the spatial uniformity of the doping from this process using spectroscopic imaging scanning tunneling microscopy (SI-STM). Using molecular beam epitaxy (MBE), we achieve electron doping of graphene on SiC using Ytterbium (Yb-Graphene). We show using in-situ ARPES that the chemical potential is shifted to within 250 meV of the vHS. Using in-situ SI-STM, we establish that there exists significant inhomogeneity in the vHS position in overdoped graphene. We find two separate reasons for this. First, the spatial inhomogeneity of the intercalated Yb leads to local variations in the doping, with a length scale of inhomogeneity set by the screening length of ~ 3 nm. Second, we observe the presence of substitutional Yb dopants in the graphene basal plane. These Yb dopants cause a strong local shift of the doping, along with a renormalization of the quasiparticle amplitude. Theoretical calculations confirm that the Yb impurities effectively change the local potential, thus energetically shifting the position of the van Hove singularity. Our results point to the importance of considering the spatial structure of doping and its inextricable link to electronic structure.

cond-mat.mes-hall↗

arXiv2024

Real-Space Imaging of the Band Topology of Transition Metal Dichalcogenides

The topological properties of Bloch bands are intimately tied to the structure of their electronic wavefunctions within the unit cell of a crystal. Here, we show that scanning tunneling microscopy (STM) measurements on the prototypical transition metal dichalcogenide (TMD) semiconductor WSe$_2$ can be used to unambiguously fix the location of the Wannier center of the valence band. Using site-specific substitutional doping, we first determine the position of the atomic sites within STM images, establishing that the maximum electronic density of states at the $K$-point lies between the atoms. In contrast, the maximum density of states at the $Γ$ point is at the atomic sites. This signifies that WSe$_2$ is a topologically obstructed atomic insulator, which cannot be adiabatically transformed to the trivial atomic insulator limit.

cond-mat.mtrl-sci↗

arXiv2024

Coupling of Electronic Transitions to Ferroelectric Order in a 2D Semiconductor

A ferroelectric material often exhibits a soft transvers optical (TO) phonon mode which governs it phase transition. Charge coupling to this ferroelectric soft mode may further mediate emergent physical properties, including superconductivity and defect tolerance. However, direct experimental evidence for such coupling is scarce. Here we show that a photo-launched coherent phonon couples strongly to electronic transitions across the bandgap in the van der Waals (vdW) two-dimensional (2D) ferroelectric semiconductor NbOI2. Using terahertz time-domain spectroscopy and first-principles calculations, we identify this mode as the TO phonon responsible for ferroelectric order. This exclusive coupling occurs only with above-gap electronic transition and is absent in the valence band as revealed by resonant inelastic X-ray scattering. Our findings suggest a new role of the soft TO phonon mode in electronic and optical properties of ferroelectric semiconductors.

cond-mat.mtrl-sci↗

arXiv2023

Two-step flux synthesis of ultrapure transition metal dichalcogenides

Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements of monolayer WSe2 yield room-temperature hole mobility above 840 cm2/Vs and low-temperature disorder-limited mobility above 44,000 cm2/Vs. Electrical transport measurements of graphene-WSe2 heterostructures fabricated from the two-step flux grown WSe2 also show superior performance: higher graphene mobility, lower charged impurity density, and well-resolved integer quantum Hall states.

cond-mat.mtrl-sci↗

arXiv2023

Dynamically tunable moiré Rydberg excitons in a monolayer semiconductor on twisted bilayer graphene

Moiré excitons are emergent optical excitations in 2D semiconductors with deep moiré superlattice potentials. While these excitations have been realized in several platforms, a system with dynamically tunable moiré potential to tailor the moiré exciton properties is yet to be realized. Here, we present a continuously tunable moiré potential in a monolayer WSe2 that is enabled by its proximity to twisted bilayer graphene (TBG) near the magic-angle. Due to its flat electronic bands, charge distribution is highly localized and forms a triangular lattice in TBG. Tuning the local charge density via electrostatic gating, TBG thus provides a spatially varying and dynamically tunable dielectric superlattice for modulating monolayer exciton wavefunctions. By performing optical reflection spectroscopy, we observe emergent moiré exciton Rydberg branches in monolayer WSe2 with increased energy splitting upon doping TBG. The twist-angle dependence reveals that the observation is due to a hybridization between bright and dark Rydberg states enabled by the moiré potential. Further, at the magic-angle near 1.1°, the moiré Rydberg excitons form a sawtooth pattern with doping owing to the formation of strongly correlated states in the TBG. Our study provides a new platform for engineering moiré excitons as well as optical accessibility to the electronic states with small correlation gaps in TBG.

cond-mat.mes-hall↗

arXiv2021

Moiré heterostructures as a condensed matter quantum simulator

Twisted van der Waals heterostructures have latterly received prominent attention for their many remarkable experimental properties, and the promise that they hold for realising elusive states of matter in the laboratory. We propose that these systems can, in fact, be used as a robust quantum simulation platform that enables the study of strongly correlated physics and topology in quantum materials. Among the features that make these materials a versatile toolbox are the tunability of their properties through readily accessible external parameters such as gating, straining, packing and twist angle; the feasibility to realize and control a large number of fundamental many-body quantum models relevant in the field of condensed-matter physics; and finally, the availability of experimental readout protocols that directly map their rich phase diagrams in and out of equilibrium. This general framework makes it possible to robustly realize and functionalize new phases of matter in a modular fashion, thus broadening the landscape of accessible physics and holding promise for future technological applications.

quant-ph↗

arXiv2021

Intrinsic Donor-Bound Excitons in Ultraclean Monolayer Semiconductors

The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (> 6 $μ$s) and polarization lifetimes (> 100 ns). Resonant excitation of the free inter- and intra-valley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellites photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.

cond-mat.mes-hall↗

arXiv2020

Complete Strain Mapping of Nanosheets of Tantalum Disulfide

Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 $μ$m on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a $\sim$ 100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized 'bubbles' that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, and will allow rapid and non-intrusive strain mapping of thin film samples and electronic devices based on quasi 2D materials.

cond-mat.mtrl-sci↗

arXiv2020

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.

cond-mat.mtrl-sci↗

arXiv2019

Magic continuum in twisted bilayer WSe2

Emergent quantum phases driven by electronic interactions can manifest in materials with narrowly dispersing, i.e. "flat", energy bands. Recently, flat bands have been realized in a variety of graphene-based heterostructures using the tuning parameters of twist angle, layer stacking and pressure, and resulting in correlated insulator and superconducting states. Here we report the experimental observation of similar correlated phenomena in twisted bilayer tungsten diselenide (tWSe2), a semiconducting transition metal dichalcogenide (TMD). Unlike twisted bilayer graphene where the flat band appears only within a narrow range around a "magic angle", we observe correlated states over a continuum of angles, spanning 4 degree to 5.1 degree. A Mott-like insulator appears at half band filling that can be sensitively tuned with displacement field. Hall measurements supported by ab initio calculations suggest that the strength of the insulator is driven by the density of states at half filling, consistent with a 2D Hubbard model in a regime of moderate interactions. At 5.1 degree twist, we observe evidence of superconductivity upon doping away from half filling, reaching zero resistivity around 3 K. Our results establish twisted bilayer TMDs as a model system to study interaction-driven phenomena in flat bands with dynamically tunable interactions.

cond-mat.mes-hall↗

arXiv2019

Blockade of vortex flow by thermal fluctuations in atomically thin clean-limit superconductors

Resistance in superconductors arises from the motion of vortices driven by flowing supercurrents or external electromagnetic fields and may be strongly affected by thermal or quantum fluctuations. The common expectation borne out in previous experiments is that as the temperature is lowered, vortex motion is suppressed, leading to a decreased resistance. A new generation of materials provides access to the previously inaccessible regime of clean-limit superconductivity in atomically thin superconducting layers. We show experimentally that for few-layer 2H-NbSe$_2$ the resistance below the superconducting transition temperature may be non-monotonic, passing through a minimum and then increasing again as temperature is decreased further. The effects exists over a wide range of current and magnetic fields, but is most pronounced in monolayer devices at intermediate currents. Analytical and numerical calculations confirm that the findings can be understood in a two-fluid vortex model, in which a fraction of vortices flow in channels while the rest are pinned but thermally fluctuating in position. We show theoretically that the pinned, fluctuating vortices effectively control the mobility of the free vortices. The findings provide a new perspective on fundamental questions of vortex mobility and dissipation in superconductors.

cond-mat.mes-hall↗

arXiv2019

Uniaxial Strain Tuning of Superconductivity in 2$H$-NbSe$_{2}$

We explore the effect of lattice anisotropy on the charge-ordered superconductor 2H-NbSe$_{2}$. Using a novel strain apparatus, we measure the superconducting transition temperature $T_{sc}$ as a function of uniaxial strain. It is found that $T_{sc}$ is independent of tensile(compressive) strain below a threshold of 0.2\% (0.1\%), but decreases strongly with larger strains with an average rate of $1.3\,$K/\% ($2.5\,$K/\%). Transport signatures of charge order are largely unaffected as a function of strain. Theoretical considerations show that the change in the behavior of $T_{sc}$ with strain coincides with a phase transition from 3Q to 1Q charge order in the material. The spectral weight on one of the Fermi surface bands is found to change strongly as a consequence of this phase transition, providing a pathway to tune superconducting order.

cond-mat.supr-con↗

arXiv2019

On the Global Geometry of Sphere-Constrained Sparse Blind Deconvolution

Blind deconvolution is the problem of recovering a convolutional kernel $\boldsymbol a_0$ and an activation signal $\boldsymbol x_0$ from their convolution $\boldsymbol y = \boldsymbol a_0 \circledast \boldsymbol x_0$. This problem is ill-posed without further constraints or priors. This paper studies the situation where the nonzero entries in the activation signal are sparsely and randomly populated. We normalize the convolution kernel to have unit Frobenius norm and cast the sparse blind deconvolution problem as a nonconvex optimization problem over the sphere. With this spherical constraint, every spurious local minimum turns out to be close to some signed shift truncation of the ground truth, under certain hypotheses. This benign property motivates an effective two stage algorithm that recovers the ground truth from the partial information offered by a suboptimal local minimum. This geometry-inspired algorithm recovers the ground truth for certain microscopy problems, also exhibits promising performance in the more challenging image deblurring problem. Our insights into the global geometry and the two stage algorithm extend to the convolutional dictionary learning problem, where a superposition of multiple convolution signals is observed.

cs.CV↗

arXiv2017

Absence of a Band Gap at Interface of a Metal and Highly Doped Monolayer $MoS_2$

High quality electrical contact to semiconducting transition metal dichalcogenides (TMDCs) such as $MoS_2$ is key to unlocking their unique electronic and optoelectronic properties for fundamental research and device applications. Despite extensive experimental and theoretical efforts reliable ohmic contact to doped TMDCs remains elusive and would benefit from a better understanding of the underlying physics of the metal-TMDC interface. Here we present measurements of the atomic-scale energy band diagram of junctions between various metals and heavily doped monolayer $MoS_2$ using ultra-high vacuum scanning tunneling microscopy (UHV-STM). Our measurements reveal that the electronic properties of these junctions are dominated by 2D metal induced gap states (MIGS). These MIGS are characterized by a spatially growing measured gap in the local density of states (L-DOS) of the $MoS_2$ within 2 nm of the metal-semiconductor interface. Their decay lengths extend from a minimum of ~0.55 nm near mid gap to as long as 2 nm near the band edges and are nearly identical for Au, Pd and graphite contacts, indicating that it is a universal property of the monolayer semiconductor. Our findings indicate that even in heavily doped semiconductors, the presence of MIGS sets the ultimate limit for electrical contact.

cond-mat.mtrl-sci↗