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arXiv · 2304.03868

Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs

Liu Liu·Shubham Kumar·Simon Thomann·Yogesh Singh Chauhan·Hussam Amrouch·Xiaobo Sharon Hu
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Abstract

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, and CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relatively high write voltage, low endurance, potential read disturbance, and face scaling challenges. Recently, a double-gate FeFET (DG-FeFET) has been proposed and outperforms SG-FeFETs in many aspects. This paper investigates TCAM design challenges specific to DG-FeFETs and introduces a novel 1.5T1Fe TCAM design based on DG-FeFETs. A 2-step search with early termination is employed to reduce the cell area and improve energy efficiency. A shared driver design is proposed to reduce the peripherals area. Detailed analysis and SPICE simulation show that the 1.5T1Fe DG-TCAM leads to superior search speed and energy efficiency. The 1.5T1Fe TCAM design can also be built with SG-FeFETs, which achieve search latency and energy improvement compared with 2FeFET TCAM.

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Liu Liu, Shubham Kumar, Simon Thomann, Yogesh Singh Chauhan, Hussam Amrouch, Xiaobo Sharon Hu. 2023-04-07. Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs. https://arxiv.org/abs/2304.03868

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