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arXiv · 2304.12765

Cryogenic Multiplexing with Bottom-Up Nanowires

Dāgs Olšteins·Gunjan Nagda·Damon J. Carrad·Daria V. Beznasiuk·Christian E. N. Petersen·Sara Martí-Sánchez·Jordi Arbiol·Thomas Sand Jespersen
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Abstract

Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrated SAG NW circuits consisting of 512 channel multiplexer/demultiplexer pairs, incorporating thousands of interconnected SAG NWs operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increase the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical SAG quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future SAG quantum circuits.

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Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad, Daria V. Beznasiuk, Christian E. N. Petersen, Sara Martí-Sánchez, Jordi Arbiol, Thomas Sand Jespersen. 2023-04-25. Cryogenic Multiplexing with Bottom-Up Nanowires. https://doi.org/10.1038/s41467-023-43551-1

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