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arXiv · 2307.13404

Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate

Xiao Wang·Zhi-Yu Lin·Yu-Min Zhang·Guo-Qiang Ren·Ke Xu
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Abstract

The effects of different substrates on the off state leakage current in gallium nitride planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current voltage characteristics.

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Xiao Wang, Zhi-Yu Lin, Yu-Min Zhang, Guo-Qiang Ren, Ke Xu. 2023-07-25. Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate. https://arxiv.org/abs/2307.13404

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