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arXiv · 2308.04230

Spin polarization gate device based on the chirality-induced spin selectivity and robust nonlocal spin polarization

Hiroaki Shishido·Yuta Hosaka·Kenta Monden·Akito Inui·Taisei Sayo·Yusuke Kousaka·Yoshihiko Togawa
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Abstract

Nonlocal spin polarization phenomena are thoroughly investigated in the devices made of chiral metallic single crystals of CrNb$_3$S$_6$ and NbSi$_2$ as well as of polycrystalline NbSi$_2$. We demonstrate that simultaneous injection of charge currents in the opposite ends of the device with the nonlocal setup induces the switching behavior of spin polarization in a controllable manner. Such a nonlocal spin polarization appears regardless of the difference in the materials and device dimensions, implying that the current injection in the nonlocal configuration splits spin-dependent chemical potentials throughout the chiral crystal even though the current is injected into only a part of the crystal. We show that the proposed model of the spin dependent chemical potentials explains the experimental data successfully. The nonlocal double-injection device may offer significant potential to control the spin polarization to large areas because of the nature of long-range nonlocal spin polarization in chiral materials.

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Hiroaki Shishido, Yuta Hosaka, Kenta Monden, Akito Inui, Taisei Sayo, Yusuke Kousaka, Yoshihiko Togawa. 2023-08-08. Spin polarization gate device based on the chirality-induced spin selectivity and robust nonlocal spin polarization. https://doi.org/10.1063/5.0156505

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