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arXiv · 2309.03043

Numerical analysis of voltage-controlled magnetization switching operation in magnetic-topological-insulator-based devices

Takashi Komine·Takahiro Chiba
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Abstract

We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of the micromagnetic simulation. This device realizes magnetization switching via spin-orbit torque(SOT) and voltage-controlled magnetic anisotropy (VCMA) which originate from 2D-Dirac electronic structure. We reveal that the device operation is extremely robust against circuit delay and signal-to-noise ratio. We demonstrate that the WER on the order of approximately $10^{-4}$ or below is achieved around room temperature due to steep change in VCMA. Also, we show that the larger SOT improves thermal stability factor. This study provides a next perspective for developing voltage-driven spintronic devices with ultra-low power consumption.

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Takashi Komine, Takahiro Chiba. 2023-09-06. Numerical analysis of voltage-controlled magnetization switching operation in magnetic-topological-insulator-based devices. https://doi.org/10.1063/5.0162297

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