arXiv subjects

Takashi Komine

Publications and source records attributed to Takashi Komine.

8 recordsLinked to original sources

arXiv2026

Learning-Performance Evaluation of a Physical Reservoir Based on a Vortex Spin-Torque Oscillator with a Modified Free Layer

In this study, we numerically evaluate the learning performance of a vortex spin-torque oscillator (VSTO) with a modified free layer, called a modified VSTO (m-VSTO), in which an additional layer (AL) of smaller radius is stacked on the free layer, for physical reservoir computing. The vortex-core dynamics are computed using the Thiele equation incorporating the potential deformation induced by the AL. We identify the edge of chaos from the maximal Lyapunov exponent and quantify the short-term memory capacity (STMC) as well as the information processing capacity (IPC) in a time-multiplexed reservoir scheme. We find that the m-VSTO exhibits finite STMC and IPC in a low-current and low-field regime below the threshold current of the conventional VSTO, and can achieve up to approximately twice the IPC with about one quarter of the power consumption. The pulse-width dependence of the IPC can be further interpreted by combining an analytical estimate of the transient time with Lyapunov-exponent data. Longer pulse widths promote stronger recovery-induced contraction toward the groove-trapped orbit over a wide range of subthreshold currents. In contrast, this difference in contraction rate becomes less pronounced near the threshold current, where the transient time increases rapidly. Consequently, the IPC is enhanced in a stable regime with a negative Lyapunov exponent rather than exactly at the edge of chaos. These results suggest that engineering the potential landscape and pulse-width-dependent recovery dynamics enables low-power spintronic physical reservoirs.

cond-mat.mes-hall↗

arXiv2025

Chaotic magnetization dynamics in magnetic Duffing oscillator

We propose a magnetic analogy of the Duffing oscillator--magnetic Duffing oscillator--which is characterized by a double-well magnetic potential of a ferromagnet with a uniaxial magnetic anisotropy. Based on the linear stability analysis of the Landau-Lifshitz-Gilbert equation, we show that an external magnetic field applied perpendicular to the magnetic anisotropy field creates an anharmonicity on the magnetic potential, generating homoclinic orbits in the phase space. By evaluating the Lyapunov exponent, we demonstrate that the magnetic Duffing oscillator exhibits chaotic behaviors in the presence of periodically oscillating external forces: Oersted field and spin-orbit torque by considering the ferromagnet/heavy-metal bilayer. We also show that the external magnetic field can be adjusted to generate or modify homoclinic orbits, thereby controlling the parameter range of the oscillating external forces that induce chaos. This work deepens our understanding of chaotic magnetization dynamics by bridging the fields of nonlinear dynamics and spintronics.

cond-mat.mes-hall↗

arXiv2023

Numerical analysis of voltage-controlled magnetization switching operation in magnetic-topological-insulator-based devices

We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of the micromagnetic simulation. This device realizes magnetization switching via spin-orbit torque(SOT) and voltage-controlled magnetic anisotropy (VCMA) which originate from 2D-Dirac electronic structure. We reveal that the device operation is extremely robust against circuit delay and signal-to-noise ratio. We demonstrate that the WER on the order of approximately $10^{-4}$ or below is achieved around room temperature due to steep change in VCMA. Also, we show that the larger SOT improves thermal stability factor. This study provides a next perspective for developing voltage-driven spintronic devices with ultra-low power consumption.

cond-mat.mes-hall↗

arXiv2023

Temperature profile of the Thomson-effect-induced heat release/absorption in junctionless single conductors

The Thomson effect induces heat release or absorption under the simultaneous application of a charge current and a temperature gradient to conductors. Here, we theoretically investigate the temperature profile due to the Thomson-effect-induced heat release/absorption in junctionless single conductors which can be a simple temperature modulator. We also perform analysis of the temperature profile for realistic conductors. As a result, we find that, for a conductor with a large Thomson coefficient, the temperature derivative of the Seebeck coefficient, the Thomson-effect-induced heat absorption overcomes the Joule heating, resulting in current-induced cooling in the bulk region. We also elucidate that a feedback effect of the Thomson effect stabilizes the system temperature to one-side of the heat bath, which reflects the fact that the Thomson effect is dependent on the position and proportional to the local temperature gradient. This work will be the basis for thermal management utilizing the Thomson effect.

cond-mat.mtrl-sci↗

arXiv2021

Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers

The magnetic damping constant is a critical parameter for magnetization dynamics and the efficiency of memory devices and magnon transport. Therefore, its manipulation by electric fields is crucial in spintronics. Here, we theoretically demonstrate the voltage-control of magnetic damping in ferro- and ferrimagnetic-insulator (FI)/topological-insulator (TI) bilayers. Assuming a capacitor-like setup, we formulate an effective dissipation torque induced by spin-charge pumping at the FI/TI interface as a function of an applied voltage. By using realistic material parameters, we find that the effective damping for a FI with 10nm thickness can be tuned by one order of magnitude under the voltage with 0.25V. Also, we provide perspectives on the voltage-induced modulation of the magnon spin transport on proximity-coupled FIs.

cond-mat.mes-hall↗

arXiv2021

Thermoelectric refrigerator based on asymmetric surfaces of a magnetic topological insulator

Thermoelectric (TE) refrigeration such as Peltier cooler enables a unique opportunity in electric energy to directly convert thermal energy. Here, we propose a TE module with both refrigeration and power generation modes by utilizing asymmetric surfaces of a magnetic topological insulator (quantum anomalous Hall insulator) with a periodic array of hollows filled with two different dielectrics. Based on the Boltzmann transport theory, we show that its efficiency, i.e., the dimensionless figure of merit ZT exceeds 1 in the low-temperature regime below 300 K. The proposed device could be utilized as a heat management device that requires precise temperature control in small-scale cooling.

cond-mat.mtrl-sci↗

arXiv2020

Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures

Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods are presented for switching the magnetization in topological insulator (TI)/magnetic-TI hybrid systems. The magnetic anisotropy energy in magnetic TIs is formulated analytically as a function of the Fermi energy, and it is confirmed that the out-of-plane magnetization is always favored for the partially occupied surface band. Also proposed is a transistor-like device with the functionality of a nonvolatile magnetic memory that uses voltage-driven writing and the (quantum) anomalous Hall effect for readout. For the magnetization reversal, by using parameters of Cr-doped Bi_{1-x}Sb_{x})_{2}Te_{3}, the estimated source-drain current density and gate voltage are of the orders of $10^4$--$10^5$~A/cm$^2$ and 0.1~V, respectively, below 20~K and the writing requires no external magnetic field. Also discussed is the possibility of magnetization switching by the proposed method in TI/ferromagnetic-insulator bilayers with the magnetic proximity effect.

cond-mat.mtrl-sci↗

arXiv2016

Tight-binding theory of surface spin states on bismuth thin films

The surface spin states for bismuth thin films were investigated using an $sp^3$ tight-binding model. The model explains the experimental observations using angle-resolved photoemission spectroscopy, including the Fermi surface, the band structure with Rashba spin splitting, and the quantum confinement in the energy band gap of the surface states. A large out-of-plane spin component also appears. The surface states penetrate inside the film to within approximately a few bilayers near the Brillouin-zone center, whereas they reach the center of the film near the Brillouin-zone boundary.

cond-mat.mes-hall↗