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arXiv · 2309.03766

Charge transfer and asymmetric coupling of MoSe$_2$ valleys to the magnetic order of CrSBr

C. Serati de Brito·P. E. Faria Junior·T. S. Ghiasi·J. Ingla-Aynés·C. R. Rabahi·C. Cavalini·F. Dirnberger·S. Mañas-Valero·K. Watanabe·T. Taniguchi·K. Zollner·J. Fabian·C. Schüller·H. S. J. van der Zant·Y. Galvão Gobato·.
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Abstract

Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs. Here, we report magneto-photoluminescence (PL) investigations of monolayer (ML) MoSe$_2$ on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe$_2$, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley $g$-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first principles calculations suggest that MoSe$_2$/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.

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C. Serati de Brito, P. E. Faria Junior, T. S. Ghiasi, J. Ingla-Aynés, C. R. Rabahi, C. Cavalini, F. Dirnberger, S. Mañas-Valero, K. Watanabe, T. Taniguchi, K. Zollner, J. Fabian, C. Schüller, H. S. J. van der Zant, Y. Galvão Gobato, .. 2023-09-07. Charge transfer and asymmetric coupling of MoSe$_2$ valleys to the magnetic order of CrSBr. https://doi.org/10.1021/acs.nanolett.3c03431

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