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arXiv · 2309.08519

Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics

Francisco Pasadas·Alberto Medina-Rull·Francisco G. Ruiz·Javier Noe Ramos-Silva·Anibal Pacheco-Sanchez·Mari Carmen Pardo·Alejandro Toral-Lopez·Andrés Godoy·Eloy Ramírez-García·David Jiménez·Enrique G. Marin
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Abstract

Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of the V-shaped transfer curve, enables to redesign and highly simplify conventional analog circuits, and simultaneously to seek for multifunctionalities specially in the HF domain. We present, here, new insights for the design of different HF applications such as power amplifiers, mixers, frequency multipliers, phase shifters, and modulators that specifically leverage the inherent ambipolarity of graphene-based transistors.

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Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz, Javier Noe Ramos-Silva, Anibal Pacheco-Sanchez, Mari Carmen Pardo, Alejandro Toral-Lopez, Andrés Godoy, Eloy Ramírez-García, David Jiménez, Enrique G. Marin. 2023-09-15. Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics. https://doi.org/10.1002/smll.202303595

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