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arXiv · 2309.10512

Erbium-ytterbium co-doped lithium niobate single-mode microdisk laser with an ultralow threshold of 1 uW

Minghui Li·Renhong Gao·Chuntao Li·Jianglin Guan·Haisu Zhang·Jintian Lin·Guanghui Zhao·Qian Qiao·Min Wang·Lingling Qiao·Li Deng·Ya Cheng
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Abstract

We demonstrate single-mode microdisk lasers in the telecom band with ultra-low thresholds on erbium-ytterbium co-doped thin-film lithium niobate (TFLN). The active microdisk were fabricated with high-Q factors by photo-lithography assisted chemo-mechanical etching. Thanks to the erbium-ytterbium co-doping providing high optical gain, the ultra-low loss nanostructuring, and the excitation of high-Q coherent polygon modes which suppresses multi-mode lasing and allows high spatial mode overlap factor between pump and lasing modes, single-mode laser emission operating at 1530 nm wavelength was observed with an ultra-low threshold, under 980-nm-band optical pump. The threshold was measured as low as 1 uW, which is one order of magnitude smaller than the best results previously reported in single-mode active TFLN microlasers. And the conversion efficiency reaches 0.406%, which is also the highest value reported in single-mode active TFLN microlasers.

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Minghui Li, Renhong Gao, Chuntao Li, Jianglin Guan, Haisu Zhang, Jintian Lin, Guanghui Zhao, Qian Qiao, Min Wang, Lingling Qiao, Li Deng, Ya Cheng. 2023-09-19. Erbium-ytterbium co-doped lithium niobate single-mode microdisk laser with an ultralow threshold of 1 uW. https://arxiv.org/abs/2309.10512

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