arXiv subjects

Haisu Zhang

Publications and source records attributed to Haisu Zhang.

At least 19 recordsLinked to original sources

arXiv2025

Monolithic low-noise erbium-doped thin-film lithium niobate waveguide amplifier with 18 dB fiber to fiber net gain

Erbium-doped waveguide amplifiers have captured great attentions in recent years due to the rapid advance of photonic integration materials and fabrication techniques. In this work, a compact erbium-doped thin-film lithium niobate waveguide amplifier integrated with high-efficiency edge-couplers on the small footprint of 2 mm{\cross}25 mm, achieving >18 dB fiber-to-fiber (off-chip) net gain with bidirectional pumping by ~1480 nm laser diodes, is fabricated by the photolithography assisted chemo-mechanical etching technique. The fiber-to-fiber noise figures of the amplifier are also characterized to be around 5 dB, and the maximum amplified signal powers at the output fiber are above 13 dBm. Theoretical amplifier modeling resolving the erbium absorption and emission spectra predicts the efficient gain scaling with waveguide length for most of the telecom C-band wavelengths. The demonstrated high-external-gain erbium-doped waveguide amplifier will benefit various applications from optical communication and metrology to integrated photonic computing and artificial intelligence

physics.optics↗

arXiv2024

An electro-optically tunable arrayed waveguide grating fabricated on thin film lithium niobate

We design and fabricate an 8-channel thin film lithium niobate (TFLN) arrayed-waveguide grating (AWG) and demonstrate the electro-optical tunability of the device. The monolithically integrated microelectrodes are designed for waveguides phase modulation and wavelength tunning. Experiments show that the fabricated electro-optically controlled TFLN AWG has a channel spacing of 200 GHz and a wavelength tuning efficiency of 10 pm/V.

physics.optics↗

arXiv2024

An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW

We demonstrate high-power thin film lithium niobate (TFLN) erbium-doped waveguide amplifier (EDWA) with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1x1 cm2. Particularly, we connect segmented LMA waveguides with waveguide tapers to achieve on-chip mode conversion which maintains single-mode propagation all over the EDWA even at the waveguide bends. The design leads to significant increase of the amplified signal power by orders of magnitude and will open an avenue for applications such as on-chip high-power lasers and amplifiers system.

physics.optics↗

arXiv2024

On-chip wavelength division multiplexing by angled multimode interferometer fabricated on erbium-doped thin film lithium niobate on insulator

Photonic integrated circuits based on erbium doped thin film lithium niobate on insulator has attracted broad interests with insofar various waveguide amplifiers and microlasers demonstrated. Wideband operation facilitated by the broadband absorption and emission of erbium ions necessitates the functional integration of wavelength filter and multiplexer on the same chip. Here a low-loss wavelength division multiplexer at the resonant pumping and emission wavelengths (~1480 nm and 1530~1560 nm) of erbium ions based on angled multimode interferometer, is realized in the erbium doped thin film lithium niobate on insulator fabricated by the photolithography assisted chemomechanical etching technique. The minimum on-chip insertion losses of the fabricated device are <0.7 dB for both wavelength ranges, and a 3-dB bandwidth of >20 nm is measured at the telecom C-band. Besides, direct visualization of the multimode interference pattern by the visible upconversion fluorescence of erbium ions compares well with the simulated light propagation in the multimode interferometer. Spectral tuning of the wavelength division multiplexer by structural design is also demonstrated and discussed.

physics.optics↗

arXiv2023

Integrated electro-optically tunable narrow-linewidth III-V laser

We demonstrate an integrated electro-optically tunable narrow-linewidth III-V laser with an output power of 738.8 μW and an intrinsic linewidth of 45.55 kHz at the C band. The laser cavity is constructed using a fiber Bragg grating (FBG) and a tunable Sagnac loop reflector (TSLR) fabricated on thin film lithium niobate (TFLN). The combination of the FBG and the electro-optically tunable TSLR offers the advantages of single spatial mode, single-frequency, narrow-linewidth, and wide wavelength tunability for the electrically pumped hybrid integrated laser, which features a frequency tuning range of 20 GHz and a tuning efficiency of 0.8 GHz/V.

physics.optics↗

arXiv2023

Thin Film Lithium Niobate Electro-optic Isolator Fabricated by photolithography assisted chemo-mechanical etching (PLACE)

We report a thin-film lithium niobate electro-optic isolator fabricated by photolithography-assisted chemo-mechanical etching in this work. The device demonstrates 39.50 dB isolation when subjected to a 24 GHz microwave of 25.5 dBm on its electrodes. The measured isolation remains consistently above 30 dB within the 1510 nm to 1600 nm wavelength range. The overall device insertion loss, specifically the fiber-to-fiber insert loss, has been measured to be 2.6 dB, which is attributed to our highly efficient spot size converter and the low propagation loss observed in the fabricated waveguides.

physics.optics↗

arXiv2023

Erbium-ytterbium co-doped lithium niobate single-mode microdisk laser with an ultralow threshold of 1 uW

We demonstrate single-mode microdisk lasers in the telecom band with ultra-low thresholds on erbium-ytterbium co-doped thin-film lithium niobate (TFLN). The active microdisk were fabricated with high-Q factors by photo-lithography assisted chemo-mechanical etching. Thanks to the erbium-ytterbium co-doping providing high optical gain, the ultra-low loss nanostructuring, and the excitation of high-Q coherent polygon modes which suppresses multi-mode lasing and allows high spatial mode overlap factor between pump and lasing modes, single-mode laser emission operating at 1530 nm wavelength was observed with an ultra-low threshold, under 980-nm-band optical pump. The threshold was measured as low as 1 uW, which is one order of magnitude smaller than the best results previously reported in single-mode active TFLN microlasers. And the conversion efficiency reaches 0.406%, which is also the highest value reported in single-mode active TFLN microlasers.

physics.optics↗

arXiv2023

Generation of Kerr soliton microcomb in a normally dispersed lithium niobate microdisk resonator by mode trimming

Anomalous microresonator dispersion is mandatory for Kerr soliton microcomb formation, which depends critically on the geometry of the microresonator and can hardly be tuned after the structure is made. To date, cavity-based microcombs have only been generated with fundamental whispering gallery modes (WGMs) of anomalous dispersion in microresonators. Moreover, microcomb generation in highly Raman-active platforms such as lithium niobate (LN) microresonators frequently suffers from stimulated Raman scattering and mode crossing due to the existence of multiple families of high-order WGMs. Here, we reveal a unique Kerr soliton microcomb generation mechanism through mode trimming in a weakly perturbed LN microdisk resonator. Remarkably, the soliton comb is generated with fundamental WGMs of normal dispersion and free from the mode crossing and Raman scattering effects. A robust soliton with a spectrum spanning from 1450 nm to 1620 nm at an on-chip pump power of 35 mW. Our discovery offers a powerful solution to circumvent the stringent requirements on high-precision dispersion engineering and termination of Raman excitation for soliton generation in the high-Q microdisk.

physics.optics↗

arXiv2023

On-chip coherent beam combination of waveguide amplifiers on Er$^{3+}$-doped thin film lithium niobate

We demonstrate on-chip coherent beam combination of two waveguide amplifiers on Er$^{3+}$-doped thin film lithium niobate (Er: TFLN) platform. Our device is built based on an electro-optic modulator fabricated on Er: TFLN. The output power of the coherently combined amplifiers is measured as high as 12.9 mW, surpassing that of previous single waveguide amplifiers based on Er$^{3+}$-doped thin film lithium niobate platform.

physics.optics↗

arXiv2023

On-chip arrayed waveguide grating fabricated on thin film lithium niobate

We design an on-chip 8-channel TFLN AWG and fabricate the device using photolithography assisted chemo-mechanical etching (PLACE) technique. We experimentally measure the transmission of the fabricated TFLN AWG near the central wavelength of 1550 nm. We obtain an on-chip loss as low as 3.32 dB, a single-channel bandwidth of 1.6 nm and a total-channel bandwidth of 12.8 nm. The crosstalk between adjacent channels was measured to be below -7.01 dB within the wavelength range from 1543 nm to 1558 nm, and the crosstalk between non-adjacent channels was below -15 dB.

physics.optics↗

arXiv2023

Electro-optically programmable photonic circuits enabled by wafer-scale integration on thin-film lithium niobate

Programmable photonic circuits performing universal linear-optical transformations underpin vital functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and many other intriguing applications. Recent advances in photonic integrated circuits facilitate monolithic integration of externally controlled Mach-Zehnder interferometers which can implement arbitrary unitary transformation on a large number of input/output modes. In this work, we demonstrate a 4x4 programmable linear photonic circuit on lithium niobate on insulator platform employing fast, power-efficient and low-loss electro-optical phase shifters, showing enormous advantages in terms of configuration rate and power consumption. Our device is capable of fast switching with 500 ps rise time and 1.7 ns fall time, and possesses a total on-chip power dissipation of only 0.015 mW when operated at 1 MHz modulation, and an insertion loss of 0.15 dB for each modulator and an on-chip extinction ratio of -34 dB for both cross and bar routes.

physics.optics↗

arXiv2022

On-chip single-mode thin film lithium niobate laser based on Sagnac loop reflectors

We demonstrate an on-chip single-mode Er3+-doped thin film lithium niobate (Er: TFLN) laser which consists of a Fabry-Pérot (FP) resonator based on Sagnac loop reflectors (SLRs). The fabricated Er: TFLN laser has a footprint of 6.5 mmx1.5 mm with a loaded quality (Q) factor of 1.6x105 and a free spectral range (FSR) of 63 pm. We generate the single-mode laser around 1550-nm wavelength with a maximum output power of 44.7 μW and a slope efficiency of 0.18 %.

physics.optics↗

arXiv2022

Monolithically integrated high-power narrow-bandwidth microdisk laser

Integrated on-chip microdisk lasers have attracted great attention as a light source of compact size, low lasing threshold and narrow bandwidth. However, challenges remain unresolved in terms of single mode operation at high output power while maintaining the ultra-narrow bandwidth. In this work, we demonstrate monolithically integrated on-chip single-frequency microdisk lasers coupled with bus-waveguides fabricated by photolithography assisted chemo-mechanical etching. Owing to the high-Q factor of a polygon whispering gallery mode formed in the microdisk and long cavity lengths (e.g., 409 um and 1 mm), a microdisk laser with a narrow linewidth of 0.11 MHz and a maximum output power of 62.1 uW has been achieved at room temperature.

physics.optics↗

arXiv2022

Modes trimming and clustering in a weakly perturbed high-Q whispering gallery microresonator

In general, a high-Q microresonator can accommodate abundant whispering gallery modes (WGMs) with the mode number increasing with the dimensional sizes of the microresonator. Removing the unnecessary modes while reorganizing the remaining modes is of vital importance, which, however, has been proved challenging and usually results in a tradeoff with the Q of the microresonator. Here, we reveal an effective and controllable mode trimming and clustering mechanism underlying the generation of polygon and star modes in weakly perturbed tapered fiber-coupled lithium niobate whispering gallery microresonators. Experimentally, various polygon and star modes are observed in sequence within a single microresonator by tuning the excitation wavelength or varying the coupling position between a tapered fiber and the circular microresonator, which can be well reproduced with our theoretical model. The finding offers a ubiquitous solution for a broad range of applications requiring elaborate selection and organization of the high-Q WGMs.

physics.optics↗

arXiv2022

Electro-optically tunable low phase-noise microwave synthesizer in an active lithium niobate microdisk

Photonic-based low-phase-noise microwave generation with real-time frequency tuning is crucial for a broad spectrum of subjects, including next-generation wireless communications, radar, metrology, and modern instrumentation. Here, for the first time to the best of our knowledge, narrow-bandwidth dual-wavelength microlasers are generated from nearly degenerate polygon modes in a high-Q active lithium niobate microdisk. The high-Q polygon modes formation with independently controllable resonant wavelengths and free spectral ranges is enabled by the weak perturbation of the whispering gallery microdisk resonators using a tapered fiber. The stable beating signal confirms the low phase-noise achieved in the tunable laser. Owing to the high spatial overlap factors between the two nearly degenerate lasing modes as well as that between the two lasing modes and the pump mode, gain competition between the two modes is suppressed, leading to stable dual-wavelength laser generation and in turn the low noise microwave source. The measured microwave signal shows a linewidth of ~6.87 kHz, a phase noise of ~-123 dBc/Hz, and an electro-optic tuning efficiency of -1.66 MHz/V.

physics.optics↗

arXiv2022

Monolithically integrated active passive waveguide array fabricated on thin film lithium niobate using a single continuous photolithography process

We demonstrate a robust low-loss optical interface by tiling passive (i.e., without doping of active ions) thin film lithium niobate (TFLN) and active (i.e., doped with rare earth ions) TFLN substrates for monolithic integration of passive/active lithium niobate photonics. The tiled substrates composed of both active and passive areas allow to pattern the mask of the integrated active passive photonic device at once using a single continuous photolithography process. The interface loss of tiled substrate is measured as low as 0.26 dB. Thanks to the stability provided by this approach, a four-channel waveguide amplifier is realized in a straightforward manner, which shows a net gain of ~5 dB at 1550-nm wavelength and that of ~8 dB at 1530-nm wavelength for each channel. The robust low-loss optical interface for passive/active photonic integration will facilitate large-scale high performance photonic devices which require on-chip light sources and amplifiers.

physics.optics↗

arXiv2022

Electrically driven compact hybrid lithium niobate microring laser

We demonstrate an electrically driven compact hybrid lithium niobate microring laser by butt coupling a commercial 980-nm pump laser diode chip with a high quality Er3+-doped lithium niobate microring chip. Single mode lasing emission at 1531 nm wavelength from the Er3+-doped lithium niobate microring can be observed with the integrated 980-nm laser pumping. The compact hybrid lithium niobate microring laser occupies the chip size of 3 mmx4mmx0.5 mm. The threshold pumping laser power is 6 mW and the threshold current is 0.5 A (operating voltage 1.64 V) in the atmospheric temperature. The spectrum featuring single mode lasing with small linewidth of 0.05 nm is observed. This work explores a robust hybrid lithium niobate microring laser source which has potential applications in coherent optical communication and precision metrology.

physics.optics↗

arXiv2022

On-chip integrated Yb3+-doped waveguide amplifiers on thin film lithium niobate

We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium niobate waveguide amplifiers will benefit the development of a powerful gain platform and are expected to contribute to the high-density integration of thin film lithium niobate based photonic chip.

physics.optics↗