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arXiv · 2310.01598

Gate-voltage switching of non-reciprocal transport in oxide-based Rashba interfaces

Julien Bréhin·Luis M. Vicente Arche·Sara Varotto·Srijani Mallik·Jean-Philippe Attané·Laurent Vila·Agnès Barthélémy·Nicolas Bergeal·Manuel Bibes
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Abstract

The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashba spin-orbit coupling. It is then coined the Edelstein effect (EE), by which a bias voltage -- generating a charge current -- produces a transverse spin density, i.e. a magnetization. Interestingly, 2D systems are sensitive to voltage gating, which provides an extra handle to control the EE. Here, we show that the sign of the EE in a SrTiO$_3$ 2DEG can be controlled by a gate voltage. We propose various logic devices harnessing the dual control of the spin density by current and gate voltages and discuss the potential of our findings for gate-tunable non-reciprocal electronics.

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Julien Bréhin, Luis M. Vicente Arche, Sara Varotto, Srijani Mallik, Jean-Philippe Attané, Laurent Vila, Agnès Barthélémy, Nicolas Bergeal, Manuel Bibes. 2023-10-02. Gate-voltage switching of non-reciprocal transport in oxide-based Rashba interfaces. https://arxiv.org/abs/2310.01598

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