arXiv subjects

Srijani Mallik

Publications and source records attributed to Srijani Mallik.

13 recordsLinked to original sources

arXiv2026

Orbital and Spin Edelstein Effects in KTaO$_3$(110) Two-Dimensional Electron Gases

The orbital Edelstein effect converts an electric field into a non-equilibrium orbital polarization, opening new opportunities for orbitronics. Although signatures of the orbital Edelstein effect have been reported, its microscopic mechanisms and quantitative validation remain underexplored. Here, by directly linking the atomic structure of KTaO$_3$(110) two-dimensional electron gases to both their calculated and measured electronic band dispersions, we predict and provide experimental evidence for an orbital Edelstein effect that largely counterbalances its spin counterpart. Scanning transmission electron microscopy and electron energy-loss spectroscopy resolve the interfacial atomic configuration, which is used as input for density-functional calculations. Angle-resolved photoemission spectroscopy then confirms the resulting band structure, which is fitted by a tight-binding model enabling computation of the spin and orbital Edelstein responses. Harmonic magnetotransport indicates that a $\sim$20 \% contribution from the orbital Edelstein response is necessary to describe the magnitude and anisotropy of the effect. Our results establish KTaO$_3$(110) as a model platform for orbitronics and demonstrate a pathway to generate and harness orbital polarization in quantum oxide systems while also offering new insights into pairing mechanisms in their superconducting state.

cond-mat.mtrl-sci↗

arXiv2025

Spontaneous nonreciprocal transport in a gate-tunable ferromagnetic Rashba 2-dimensional electron gas

The broken inversion symmetry at interfaces of complex oxides gives rise to emergent phenomena, including ferromagnetism and Rashba spin-orbit coupling (SOC), which profoundly influence the electronic structure by entangling spin and momentum. While the interplay between Rashba SOC and ferromagnetism is theoretically intriguing, its experimental manifestations remain largely unexplored. Here, we demonstrate that ferromagnetic 2DEGs at SrTiO$_3$-based interfaces exhibit spontaneous nonreciprocal transport - a distinctive hallmark of Rashba ferromagnets - even in the absence of an external magnetic field. This nonreciprocal response, along with clear signatures of ferromagnetism such as anisotropic magnetoresistance and the anomalous Hall effect (AHE), is strongly tunable by gate voltage. Remarkably, the AHE not only varies in amplitude but even reverses sign, reflecting a subtle interplay between Fermi level position and Berry curvature distribution. These results establish SrTiO$_3$ 2DEGs as a model platform for studying Rashba ferromagnetism and demonstrate active control over transport phenomena in time- and inversion-symmetry-broken systems, paving the way for gate-tunable spintronic devices.

cond-mat.str-el↗

arXiv2023

Electronic bandstructure of superconducting KTaO3 (111) interfaces

Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orientations has already been mapped using angle-resolved photoemission spectroscopy(ARPES), this is not the case for superconducting KTaO3 2DEGs. Here, we reveal the electronic structure of superconducting 2DEGs based on KTaO3 (111) single crystals through ARPES measurements. We fit the data with a tight-binding model and compute the associated spin textures to bring insight into the SOC-driven physics of this fascinating system.

cond-mat.mtrl-sci↗

arXiv2023

Gate-voltage switching of non-reciprocal transport in oxide-based Rashba interfaces

The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashba spin-orbit coupling. It is then coined the Edelstein effect (EE), by which a bias voltage -- generating a charge current -- produces a transverse spin density, i.e. a magnetization. Interestingly, 2D systems are sensitive to voltage gating, which provides an extra handle to control the EE. Here, we show that the sign of the EE in a SrTiO$_3$ 2DEG can be controlled by a gate voltage. We propose various logic devices harnessing the dual control of the spin density by current and gate voltages and discuss the potential of our findings for gate-tunable non-reciprocal electronics.

cond-mat.mes-hall↗

arXiv2023

All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases

The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures.

cond-mat.mes-hall↗

arXiv2022

Patterning of superconducting two-dimensional electron gases based on AlO$_x$/KTaO$_3$(111) interfaces

The versatility of properties displayed by two-dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the recently discovered superconducting state appearing in (111)-oriented KTaO$_3$ interfaces, with a critical temperature $T_c \approx 2$ K, almost ten times higher than that of SrTiO$_3$-based 2DEGs. Just as in SrTiO$_3$-based 2DEGs, fabricating devices in this new system is a technical challenge due to the fragility of the 2DEG and the propensity of bulk KTaO$_3$ to become conducting outside the devices upon adventitious oxygen vacancy doping. Here, we present three different techniques for patterning Hall bars in AlO$_x$/KTaO$_3$~(111) heterostructures. The devices show superconducting transitions ranging from 1.3 K to 1.78 K, with limited degradation from the unpatterned thin film, and enable an efficient tuning of the carrier density by electric field effect. The array of techniques allows for the definition of channels with a large range of dimensions for the design of various kinds of devices to explore the properties of this system down to the nanoscale.

cond-mat.mtrl-sci↗

arXiv2022

Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO$_3$ interfaces

Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO$_3$-2DEGs and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide 2DEGs. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance.

cond-mat.mes-hall↗

arXiv2021

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices.

cond-mat.mes-hall↗

arXiv2021

From low-field Sondheimer oscillations to high-field very large and linear magnetoresistance in a SrTiO$_3$-based two-dimensional electron gas

Quantum materials harbor a cornucopia of exotic transport phenomena challenging our understanding of condensed matter. Among these, a giant, non-saturating linearmagnetoresistance (MR) has been reported in various systems, from Weyl semi-metals to topological insulators. Its origin is often ascribed to unusual band structure effects but it may also be caused by extrinsic sample disorder. Here, we report a very large linear MR in a SrTiO$_3$ two-dimensional electron gas and, by combining transport measurements with electron spectro-microscopy, show that it is caused by nanoscale inhomogeneities that are self-organized during sample growth. Our data also reveal semi-classical Sondheimer oscillations arising from interferences between helicoidal electron trajectories, from which we determine the 2DEG thickness. Our results bring insight into the origin of linear MR in quantum materials, expand the range of functionalities of oxide 2DEGs and suggest exciting routes to explore the interaction of linear MR with features like Rashba spin-orbit coupling.

cond-mat.mes-hall↗

arXiv2021

Effect of Fullerene on domain size and relaxation in a perpendicularly magnetized Pt/Co/C60/Pt system

Buckminsterfullerene (C60) can exhibit ferromagnetism at the interface (called as a spinterface) when it is placed next to a ferromagnet (FM). Formation of such spinterface happens due to orbital hybridization and spin polarized charge transfer at the interface. The spinterface can influence the domain size and dynamics of the organic/ferromagnetic heterostructure. Here, we have performed magnetic domain imaging and studied the relaxation dynamics in Pt/Co/C60/Pt system with perpendicular anisotropy. We have compared the results with its parent Pt/Co/Pt system. It is observed that presence of C60 in the Pt/Co/Pt system increases the anisotropy and a decrease in the bubble domain size. Further the switching time of Pt/Co/C60/Pt system is almost two times faster than Pt/Co/Pt system. We have also performed the spin polarized density functional theory (DFT) calculations to understand the underneath mechanism. DFT results show formation of a spin polarized spinterface which leads to an enhancement in anisotropy.

cond-mat.mtrl-sci↗

arXiv2021

Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion

SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier.

cond-mat.mes-hall↗

arXiv2019

Enhanced anisotropy and study of magnetization reversal in Co/C60 bilayer thin film

The interface between organic semiconductor [OSC]/ferromagnetic [FM] material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from FM to OSC layer leading to the formation of `spinterface' i.e. the interface exhibiting a finite magnetic moment. In this work, the magnetic properties of Co/C$_{60}$ bilayer thin film have been studied to probe the interface between Co and C$_{60}$ layer. Polarized neutron reflectivity [PNR] measurement indicates that the thickness and moment of the spinterface are $\sim$ 2 $\pm$ 0.18 nm and 0.8 $\pm$ 0.2 $μ_B$/cage, respectively. The comparison of the magnetization reversal between the Co/C$_{60}$ bilayer and the parent single layer Co thin film reveals that spinterface modifies the domain microstructure. Further, the anisotropy of the bilayer system shows a significant enhancement ($\sim$ two times) in comparison to its single layer counterpart which is probably due to an additional interfacial anisotropy arising from the orbital hybridization at the Co/C$_{60}$ interface.

cond-mat.mtrl-sci↗

arXiv2019

Tuning spinterface properties in Iron/Fullerene thin films

In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the "spinterface". One of the main motivation in this field of organic spintronics is how to control the magnetic moment in the spinterface. In this regard, there are several open questions such as (i) which combination of FM and OSC can lead to more moment at the spinterface? (ii) Is the thickness of OSC also important? (iii) How does the spinterface moment vary with the FM thickness? (iv) Does the crystalline quality of the FM matters? (v) What is the effect of spinterface on magnetization reversal, domain structure and anisotropy? In this context, we have tried to answer the last three issues in this paper by studying Fe/C$_{60}$ bilayers of variable Fe thickness deposited on Si substrates. We find that both the induced moment and thickness of the spinterface vary proportionally with the Fe thickness. Such behavior is explained in terms of the growth quality of the Fe layer on the native oxide of the Si (100) substrate. The magnetization reversal, domain structure and anisotropy of these bilayer samples were studied and compared with their respective reference samples without having the C$_{60}$ layer. It is observed that the formation of spinterface leads to reduction in uniaxial anisotropy in Fe/C$_{60}$ on Si (100) in comparison to their reference samples.

physics.app-ph↗