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arXiv · 2311.00326

Transport and electrical properties of cryogenic thermoelectric FeSb2: the effect of isoelectronic and hole doping

Deepak Gujjar·Sunidhi Gujjar·V. K. Malik·Hem C. Kandpal
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Abstract

Thermoelectric materials operating at cryogenic temperatures are in high demand for efficient cooling and power generation in applications ranging from superconductors to quantum computing. The narrow band-gap semiconductor FeSb2, known for its colossal Seebeck coefficient, holds promise for such applications, provided its thermal conductivity value can be reduced. This study investigates the impact of isoelectronic substitution (Bi) and hole doping (Pb) at the Sb site on the transport properties of FeSb2, with a particular focus on thermal conductivity (\k{appa}). Polycrystalline FeSb2 powder, along with Bi- and Pb-doped samples, were synthesized using a simple co-precipitation approach, followed by thermal treatment in an H2 atmosphere. XRD and SEM analysis confirms the formation of the desired phase pre- and post-consolidation using spark plasma sintering (SPS). The consolidation process resulted in a high compaction density and the formation of submicrometer-sized grains, as substantiated by electron backscattered diffraction (EBSD) analysis. Substituting 1% of Bi and Pb at the Sb site successfully suppressed the thermal conductivity (\k{appa}) from ~15 W/m-K in pure FeSb2 to ~10 and ~8.7 W/m-K, respectively. Importantly, resistivity measurements revealed a metal-to-insulator transition at around 6.5 K in undoped FeSb2 and isoelectronically Bi-substituted FeSb2, suggesting the existence of metallic surface states and provides valuable evidence for the perplexing topological behavior exhibited by FeSb2.

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Deepak Gujjar, Sunidhi Gujjar, V. K. Malik, Hem C. Kandpal. 2023-11-01. Transport and electrical properties of cryogenic thermoelectric FeSb2: the effect of isoelectronic and hole doping. https://arxiv.org/abs/2311.00326

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