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arXiv · 2311.18031

Two-dimensional field-effect transistors based on lateral heterojunctions of transition metal dichalcogenides: dissipative quantum transport modeling

Giuseppe Lovarelli·Fabrizio Mazziotti·Demetrio Logoteta·Giuseppe Iannaccone
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Abstract

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process. Suitably designed lateral heterojunctions provide an opportunity to independently tailor the contact and channel properties in order to optimize contact resistance. Inspired by the recent experimental demonstration of a two-dimensional $p$-type Schottky barrier, here we use quantum transport simulations to estimate the performance of $p$-type transistors in which the channel consists of a lateral heterostructure of NbS$_2$/MoS$_2$/NbS$_2$ (semimetal-semiconductor-semimetal). We find that the gate alignment with the channel is a critical design parameter, strongly influencing the capability of the gate to modulate the Schottky barrier at the MoS$_2$/NbS$_2$ interface. This effect is also found to significantly affect the scaling behavior of the device.

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Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta, Giuseppe Iannaccone. 2023-11-29. Two-dimensional field-effect transistors based on lateral heterojunctions of transition metal dichalcogenides: dissipative quantum transport modeling. https://arxiv.org/abs/2311.18031

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