Seamless monolithic three-dimensional integration of single-crystalline films by growth

Abstract

The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D format, despite encountering significant processing challenges. While monolithic 3D (M3D) integration schemes show promise, the seamless connection of single-crystalline semiconductors without intervening wafers has yet to be demonstrated. This challenge arises from the inherent difficulty of growing single crystals on amorphous or polycrystalline surfaces post the back-end-of-the-line process at low temperatures to preserve the underlying circuitry. Consequently, a practical growth-based solution for M3D of single crystals remains elusive. Here, we present a method for growing single-crystalline channel materials, specifically composed of transition metal dichalcogenides, on amorphous and polycrystalline surfaces at temperatures lower than 400 {\deg}C. Building on this developed technique, we demonstrate the seamless monolithic integration of vertical single-crystalline logic transistor arrays. This accomplishment leads to the development of unprecedented vertical CMOS arrays, thereby constructing vertical inverters. Ultimately, this achievement sets the stage to pave the way for M3D integration of various electronic and optoelectronic hardware in the form of single crystals.