Transport response of topological hinge modes in $\alpha$-Bi$_4$Br$_4$

Abstract

Electronic topological phases are renowned for their unique properties, where conducting surface states exist on the boundary of an insulating three-dimensional bulk. While the transport response of the surface states has been extensively studied, the response of the topological hinge modes remains elusive. Here, we investigate a layered topological insulator $\alpha$-Bi$_4$Br$_4$, and provide the first evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps. Our magnetoresistance measurements reveal pronounced h/e periodic (where h denotes Planck's constant and e represents the electron charge) Aharonov-Bohm oscillation. The observed periodicity, which directly reflects the enclosed area of phase-coherent electron propagation, matches the area enclosed by the sample hinges, providing compelling evidence for the quantum interference of electrons circumnavigating around the hinges. Notably, the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry, and in agreement with the locations of the hinge modes according to our scanning tunneling microscopy images. Remarkably, this demonstration of quantum transport in a topological insulator can be achieved using a flake geometry and we show that it remains robust even at elevated temperatures. Our findings collectively reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can be directly applied to the development of efficient quantum electronic devices.