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arXiv · 2312.09704

Quantum Hall effect in InAsSb quantum wells at elevated temperatures

M. E. Bal·E. Cheah·Z. Lei·R. Schott·C. A. Lehner·H. Engelkamp·W. Wegscheider·U. Zeitler
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Abstract

We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of $m^{\ast} \approx$ 0.022$m_{e}$, which is lower than in the investigated InSb quantum well, but due to a rather strong confinement still higher than in the corresponding bulk compound. The effective $g$-factor was determined to be $g^{\ast} \approx$ 21.9. These results are also corroborated by $k \cdot p$ band structure calculations. When spin polarizing the electrons in a tilted magnetic field, the $g$-factor is significantly enhanced by electron-electron interactions, reaching a value as large as $g^{\ast}$ = 60 at a spin polarization P = 0.75. Finally, we show that due to the low effective mass the quantum Hall effect in our particular sample can be observed up to a temperature of 60 K and we propose scenarios how to increase this temperature even further.

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M. E. Bal, E. Cheah, Z. Lei, R. Schott, C. A. Lehner, H. Engelkamp, W. Wegscheider, U. Zeitler. 2023-12-15. Quantum Hall effect in InAsSb quantum wells at elevated temperatures. https://arxiv.org/abs/2312.09704

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