arXiv subjects

M. E. Bal

Publications and source records attributed to M. E. Bal.

5 recordsLinked to original sources

arXiv2026

Gate induced strain on a two-dimensional hole gas in silicon

We show the effect of gate-induced strain on the valence band of a silicon (Si) metal oxide semiconductor (MOS) confined two-dimensional hole gas (2DHG). Increasing aluminum gate thickness, and thereby the strain in the channel, results in the onset of a second subband contributing to Shubnikov-de Haas oscillations. Temperature-dependent magnetotransport measurements reveal distinct cyclotron masses of $m_c^*=(0.36\pm0.04)m_0$ and $m_c^*=(0.49\pm0.02)m_0$. The measured cyclotron masses differ from those expected for an idealized heavy-hole (HH)/light-hole (LH) picture, reflecting the combined influence of quantum confinement, strain, and HH-LH mixing on the valence band.

cond-mat.mes-hall↗

arXiv2026

FIR transmission and resistively detected cyclotron resonances in InSb

We have developed an experimental setup to simultaneously acquire magneto-transmission spectra and measure the photoconductive response. The low-temperature ($T$=4.2 K) magneto-transmission data for weakly doped InSb in the frequency range 3-15 THz and magnetic fields up to 25 T, shows that the AC conductivity is governed by the classical Drude response. Moreover, the resulting light-induced voltage in this system, consisting of thermoelectric and resistive contributions, both contain features that are related to cyclotron resonances. The frequency dependence of this resonance is in good agreement with $\mathbf{k\cdot p}$ perturbation theory and corresponds to transitions between the first and second Landau level with spin-up electrons. The obtained effective mass $m^{*}(B=0)=0.014m_{e}$, is in line with the value extracted from magneto-transmission experiments. Additionally, we can observe evidence of a fluence-dependent metal-insulator transition in the thermoelectric signal, which suggest that the electronic system becomes less sensitive to the light at higher frequencies.

cond-mat.mtrl-sci↗

arXiv2023

Quantum Hall effect in InAsSb quantum wells at elevated temperatures

We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of $m^{\ast} \approx$ 0.022$m_{e}$, which is lower than in the investigated InSb quantum well, but due to a rather strong confinement still higher than in the corresponding bulk compound. The effective $g$-factor was determined to be $g^{\ast} \approx$ 21.9. These results are also corroborated by $k \cdot p$ band structure calculations. When spin polarizing the electrons in a tilted magnetic field, the $g$-factor is significantly enhanced by electron-electron interactions, reaching a value as large as $g^{\ast}$ = 60 at a spin polarization P = 0.75. Finally, we show that due to the low effective mass the quantum Hall effect in our particular sample can be observed up to a temperature of 60 K and we propose scenarios how to increase this temperature even further.

cond-mat.mes-hall↗

arXiv2022

Antiferromagnetic Hysteresis above the Spin Flop Field

Magnetocrystalline anisotropy is essential in the physics of antiferromagnets and commonly treated as a constant, not depending on an external magnetic field. However, we demonstrate that in CoO the anisotropy should necessarily depend on the magnetic field, which is shown by the spin Hall magnetoresistance of the CoO $|$ Pt device. Below the Néel temperature CoO reveals a spin-flop transition at 240 K at 7.0 T, above which a hysteresis in the angular dependence of magnetoresistance unexpectedly persists up to 30 T. This behavior is shown to agree with the presence of the unquenched orbital momentum, which can play an important role in antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature

One of the most important challenges in antiferromagnetic spintronics is the read-out of the Néel vector state. High current densities up to 10$^8$ Acm$^{-2}$ used in the electrical switching experiments cause notorious difficulty in distinguishing between magnetic and thermal origins of the electrical signals. To overcome this problem, we present a temperature dependence study of the transverse resistance changes in the switching experiment with CoO|Pt devices. We demonstrate the possibility to extract a pattern of spin Hall magnetoresistance for current pulses density of $5 \times 10^7$ Acm$^{-2}$ that is present only below the Néel temperature and does not follow a trend expected for thermal effects. This is the compelling evidence for the magnetic origin of the signal, which is observed using purely electrical techniques. We confirm these findings by complementary experiments in an external magnetic field. Such an approach can allow determining the optimal conditions for switching antiferromagnets and be very valuable when no imaging techniques can be applied to verify the origin of the electrical signal.

cond-mat.mtrl-sci↗