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arXiv · 2401.07607

SnS2 thin film with in-situ and controllable Sb doping via atomic layer deposition for optoelectronic applications

Dong-Ho Shin·Jun Yang·Samik Mukherjee·Amin Bahrami·Sebastian Lehmann·Noushin Nasiri·Fabian Krahl·Chi Pang·Angelika Wrzesińska-Lashkova·Yana Vaynzof·Steve Wohlrab·Alexey Popov·Kornelius Nielsch
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Abstract

SnS2 stands out as a highly promising two-dimensional material with significant potential for applications in the field of electronics. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by doping with various metal ions. Here, we deposited a series of Sb-doped SnS2 via atomic layer deposition (ALD) super-cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS2. We found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS2) to 4.75 eV (Sb-doped SnS2 with 9:1 ratio). When integrated into photodetectors, the Sb-doped SnS2 showed improved performances, demonstrating increased peak photoresponsivity values from 19.5 A/W to 27.8 A/W at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next-generation optoelectronic applications based on SnS2.

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Dong-Ho Shin, Jun Yang, Samik Mukherjee, Amin Bahrami, Sebastian Lehmann, Noushin Nasiri, Fabian Krahl, Chi Pang, Angelika Wrzesińska-Lashkova, Yana Vaynzof, Steve Wohlrab, Alexey Popov, Kornelius Nielsch. 2024-01-15. SnS2 thin film with in-situ and controllable Sb doping via atomic layer deposition for optoelectronic applications. https://arxiv.org/abs/2401.07607

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