arXiv · 2403.01019
Two-photon absorption in silicon using real density matrix approach
Abstract
Two-photon absorption in indirect gap semiconductors is an frequently encountered, but not well-understood phenomenon. To address this, the Real Density Matrix Approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials, and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.
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David Ziemkiewicz, David Knez, Evan P. Garcia, Sylwia Zielińska-Raczyńska, Gerard Czajkowski, Alessandro Salandrino, Sergey S. Kharintsev, Aleksei I. Noskov, Eric O. Potma, Dmitry A. Fishman. 2024-03-01. Two-photon absorption in silicon using real density matrix approach. https://arxiv.org/abs/2403.01019
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