arXiv subjects

Aleksei I. Noskov

Publications and source records attributed to Aleksei I. Noskov.

5 recordsLinked to original sources

arXiv2026

Nanometric voids as optical antennas for rewritable momentum-engineered photonics in silicon

Optical antennas are widely used to localize electromagnetic fields far below the diffraction limit, enabling enhanced light-matter interactions across nanophotonics. Yet the regime in which optical confinement approaches the electronic de Broglie wavelength in a solid - where the photon momentum distribution broadens sufficiently to relax optical selection rules - remains largely unexplored. Here we show that nanometric voids embedded within crystalline silicon act as such optical antennas, dramatically altering the optical response of an indirect semiconductor without the introduction of any foreign material. Using an electrically induced melt-quench process, we generate nanometric voids throughout bulk silicon, confirmed by high-resolution electron microscopy, diffraction analysis, Fourier-filtered lattice reconstruction, elemental mapping, and supported by optical and vibrational spectroscopies. The void-containing silicon exhibits intense broadband photo- and electroluminescence spectrally indistinguishable from that produced by metallic or semiconductor nanoconfiners of similar dimensions, establishing that dielectric discontinuity, not confiner composition, governs the observed momentum-assisted optical transitions. The luminescence can be repeatedly written, erased, and rewritten through alternating electrical conditioning and optical recrystallization. These findings establish nanometric voids as a previously unexplored platform for extreme optical confinement and demonstrate that photonic functionality can be embedded and reconfigured directly within bulk silicon.

physics.optics↗

arXiv2026

Broadband Photo- and Electroluminescence from Bulk Silicon via Strong Photonic Confinement

Silicon indirect bandgap fundamentally limits its ability to emit light, hindering the development of silicon-based light sources. Here, we explore a conceptually new solution to this long-standing challenge. We demonstrate ultrabroadband photo- and electroluminescence from bulk silicon, enabled by a radiative pathway mediated by momentum-expanded photonic states that bypass phonon-assisted transitions. This mechanism, previously demonstrated using metallic nanoparticles as photon confiners, is here realized in an all-silicon system using embedded sub-1.5 nm silicon nanoparticles. Since such ultrasmall particles possess negligible intrinsic emission efficiency, we instead demonstrate that they act as photonic confiners, enabling radiative recombination in the surrounding bulk material. The agreement with prior metal-based systems confirms that confinement size, rather than material composition, governs the activation of radiative transitions in a momentum-forbidden system. The emission spans the visible to near-infrared spectral range, with electroluminescence in an undoped semiconductor device visible under ambient conditions and a quantum efficiency estimated as ~0.2%. These findings establish a new route to efficient light emission in silicon and reveal a hybrid light-matter regime in which extreme photonic confinement reshapes the electronic transition landscape.

physics.optics↗

arXiv2026

Video-rate mid-infrared imaging in the molecular fingerprint region via nanosecond non-degenerate two-photon absorption

Non-degenerate two-photon absorption (NTA) offers an attractive route for wide-field mid-infrared (MIR) imaging by mapping long wavelength information into the spectral detection windows of mature near-infrared detector technologies. However, existing NTA implementations rely almost exclusively on complex, large-footprint femtosecond laser systems, severely limiting practicality and scalability. Here, we demonstrate an NTA imaging platform that replaces the ultrafast laser with a compact nanosecond mid-IR source coupled to a high-definition indium gallium arsenide (InGaAs) camera. Operating in the nanosecond regime removes stringent temporal-overlap requirements, dramatically simplifying system architecture while preserving high nonlinear sensitivity. Using this approach, we achieve chemically selective, wide-field imaging deep into the mid-IR molecular fingerprint region and demonstrate, for the first time, video-rate NTA imaging in this spectrally rich regime. By combining relaxed alignment constraints, compact excitation, and high-speed fingerprint-region imaging, this work establishes nanosecond NTA as a practical and scalable foundation for next-generation mid-IR chemical imaging.

physics.optics↗

arXiv2025

Overcoming the indirect bandgap: efficient silicon emission via momentum-expanded photonic states

Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and holes (quantum dots), Mie resonators, and hybrid plasmonic structures have improved emission, they typically require complex fabrication workflows. Here, we demonstrate a conceptually distinct and scalable approach to enable light emission from a bulk silicon wafer by decorating its surface with gold or copper nanoparticles. Remarkably, the effect is nearly identical for Au and Cu, with particle size emerging as the dominant factor. We show that strong luminescence from the bulk wafer emerges only when the nanoparticle diameter is below 2 nm. We attribute this effect to the formation of spatially confined photonic states with broadened momentum distributions, which must enable diagonal, phonon-independent optical transitions that bypass the limitations imposed by silicon's indirect bandgap. This mechanism yields broadband emission across the visible and near-infrared spectrum, with quantum efficiencies comparable to direct bandgap semiconductors, representing a 10^5-fold increase in integrated spectral intensity. This discovery challenges the conventional understanding of silicon's optical constraints and opens a practical pathway toward high-performance silicon-based optical and optoelectronic components.

physics.optics↗

arXiv2024

Two-photon absorption in silicon using real density matrix approach

Two-photon absorption in indirect gap semiconductors is an frequently encountered, but not well-understood phenomenon. To address this, the Real Density Matrix Approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials, and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.

physics.optics↗