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arXiv · 2403.08468

Kondo Effect in Micron Size Device Fabricated From Flakes of Mn Doped Bi2Se3 Topological Insulator

Vishal K. Maurya·Jeetendra K. Tiwari·S. Ghosh·S. Patnaik
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Abstract

Single crystals of Mn0.03Bi1.97Se3 were synthesized by modified Bridgman technique and phase purity was confirmed via XRD analysis. EDAX analysis has verified the stoichiometric ratio of elements in the sample. Sample flakes were transferred to the SiO2/Si n-type substrate by mechanical exfoliation technique. Four probe gold contacts were etched with the help of e-beam lithography by masking and lift off process. Resistivity measurement was performed in four probe configurations in 2-300 K temperature range. We report evidence for Kon-do effect in Mn0.03Bi1.97Se3 micro-flakes with Tmin of 14.4 K.

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Vishal K. Maurya, Jeetendra K. Tiwari, S. Ghosh, S. Patnaik. 2024-03-13. Kondo Effect in Micron Size Device Fabricated From Flakes of Mn Doped Bi2Se3 Topological Insulator. https://arxiv.org/abs/2403.08468

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