Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor

Koushik Dey; Bikash Das; Pabitra Kumar Hazra; Tanima Kundu; Sanjib Naskar; Soumik Das; Sujan Maity; Poulomi Maji; Bipul Karmakar; Rahul Paramanik; Subhadeep Datta

arXiv · 2403.11658

Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor

Koushik Dey·Bikash Das·Pabitra Kumar Hazra·Tanima Kundu·Sanjib Naskar·Soumik Das·Sujan Maity·Poulomi Maji·Bipul Karmakar·Rahul Paramanik·Subhadeep Datta

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Abstract

The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric and paraelectric phases plays crucial role in stabilizing of n-channel-conductance. This results into the emergence of a non-volatile logic state, between the two binary states of TFETs. Concerned study proposed NC-TFETs based on ferroionic crystals as promising devices for generating a stable logic state below Vth.

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Koushik Dey, Bikash Das, Pabitra Kumar Hazra, Tanima Kundu, Sanjib Naskar, Soumik Das, Sujan Maity, Poulomi Maji, Bipul Karmakar, Rahul Paramanik, Subhadeep Datta. 2024-03-18. Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor. https://arxiv.org/abs/2403.11658

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