arXiv subjects

Koushik Dey

Publications and source records attributed to Koushik Dey.

10 recordsLinked to original sources

arXiv2026

Percolative Instabilities and Sparse-Limit Fractality in 1T-TaS$_2$

The low-temperature metallic phase of 1T-TaS2 may originate from current- and voltage-driven destabilization of the commensurate charge density wave (CDW) in a strongly correlated Mott insulator, alongside the robust yet rarely realized influence of intrinsic electronic distortions. Electrical pulse-driven transport, combined with second harmonic response, reveals abrupt switching, negative differential resistance (NDR), and multiscale domain-wall reorganization. The free energy analysis identifies a critical order parameter threshold for the Mott-metal transition, with scaling exponents (β approx 1.3) consistent with 2D percolation. The sparse limit fractal dimension D_{f} approx 0.3 at 10 K, rising to approx 0.9 at 300 K, reflects the hierarchical evolution of the conductive pathways throughout the temperature. These findings establish a direct connection between fractal percolation, pulse-induced instabilities, and correlated electron transport, offering a framework for controlled access to non-equilibrium phase transitions in low-dimensional quantum materials.

cond-mat.mes-hall↗

arXiv2025

Optimized Agent Shift Scheduling Using Multi-Phase Allocation Approach

Effective agent shift scheduling is crucial for businesses, especially in the Contact Center as a Service (CCaaS) industry, to ensure seamless operations and fulfill employee needs. Most studies utilizing mathematical model-based solutions approach the problem as a single-step process, often resulting in inefficiencies and high computational demands. In contrast, we present a multi-phase allocation method that addresses scalability and accuracy by dividing the problem into smaller sub-problems of day and shift allocation, which significantly reduces number of computational variables and allows for targeted objective functions, ultimately enhancing both efficiency and accuracy. Each subproblem is modeled as a Integer Programming Problem (IPP), with solutions sequentially feeding into the subsequent subproblem. We then apply the proposed method, using a multi-objective framework, to address the difficulties posed by peak demand scenarios such as holiday rushes, where maintaining service levels is essential despite having limited number of employees

cs.AI↗

arXiv2025

Dimensional crossover and emergence of novel phases in puckered PdSe$_2$ under pressure

We investigate the pressure-driven structural and electronic evolution of PdSe$_2$ using powder X-ray diffraction, Raman spectroscopy, and first-principles calculations. Beyond 2.3 GPa, suppression of the Jahn-Teller distortion induces in-plane lattice expansion and metallization. Around 4.8 GPa, the interlayer $d_{z^2}-π^*$ orbital hybridization drives the dimensional crossover, facilitating the transformation from the 2D distorted to a 3D undistorted pyrite phase. At $\sim$ 9 GPa, a novel phase emerges, characterized by octahedral distortions in the $d$ orbitals of Pd. Structural analysis suggests the presence of marcasite ($Pnnm$) or arsenopyrite ($P2_1/c$) phase with orthorhombic and monoclinic configurations, respectively. Furthermore, the observed phonon anomaly and electronic structure modifications, including the emergence of flat bands in the high-pressure phases, elucidate the fundamental mechanisms underlying the previously reported exotic superconductivity with an enhanced critical temperature. These results highlight the pivotal role of dimensional crossover and structural transitions in tuning the electronic properties of puckered materials, providing pathways for novel functionalities.

cond-mat.mtrl-sci↗

arXiv2025

Magnetodielectric Properties in Two Dimensional Magnetic Insulators

Magnetodielectric (MD) materials are important for their ability to spin-charge conversion, magnetic field control of electric polarization and vice versa. Among these, two-dimensional (2D) van der Waals (vdW) magnetic materials are of particular interest due to the presence of magnetic anisotropy (MA) originating from the interaction between the magnetic moments and the crystal field. Also, these materials indicate a high degree of stability in the long-range spin order and may be described using suitable spin Hamiltonians of the Heisenberg, XY, or Ising type. Recent reports have suggested effective interactions between magnetization and electric polarization in 2D magnets. However, MD coupling studies on layered magnetic materials are still few. This review covers the fundamentals of magnetodielectric coupling by explaining related key terms. It includes the necessary conditions for having this coupling and sheds light on the possible physical mechanisms behind this coupling starting from phenomenological descriptions. Apart from that, this review classifies 2D magnetic materials into several categories for reaching out each and every class of materials. Additionally, this review summarizes recent advancements of some pioneer 2D magnetodielectric materials. Last but not the least, the current review provides possible research directions for enhancing magnetodielectric coupling in those and mentions the possibilities for future developments.

cond-mat.mtrl-sci↗

arXiv2024

Tailored 1D/2D Van der Waals Heterostructures for Unified Analog and Digital Electronics

We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential pathway to create large scale, high-quality, defect-free interfaces. The assembly of samples serves a twofold application: first, the as-prepared heterostructures (Te NW/MoS$_2$) provide insights into the atomically thin depletion region of a 1D/2D vdW diode, as revealed by electrical transport measurements and density functional theory-based quantum transport calculations. The charge transfer at the heterointerface is confirmed using Raman spectroscopy and Kelvin probe force microscopy (KPFM). We also observe modulation of the rectification ratio with varying applied gate voltage. Second, the non-hybrid regions on the substrate, consisting of the as-grown individual Te nanowires and MoS$_2$ microstructures, are utilized to fabricate separate p- and n-FETs, respectively. Furthermore, the ionic liquid gating helps to realize low-power CMOS inverter and all basic logic gate operations using a pair of n- and p- field-effect transistors (FETs) on Si/SiO$_2$ platform. This approach also demonstrates the potential for unifying diode and CMOS circuits on a single platform, opening opportunities for integrated analog and digital electronics.

cond-mat.mes-hall↗

arXiv2024

Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure

Electron-magnon coupling reveals key insights into the interfacial properties between non-magnetic metals and magnetic insulators, influencing charge transport and spin dynamics. Here, we present temperature-dependent Raman spectroscopy and magneto-transport measurements of few-layer graphene (FLG)/antiferromagnetic FePS$_3$ heterostructures. The magnon mode in FePS$_3$ softens below 40 K, and effective magnon stiffness decreases with cooling. Magnetotransport measurements show that FLG exhibits negative magnetoresistance (MR) in the heterostructure at low fields ($\pm 0.2 \, \text{T}$), persisting up to 100 K; beyond this, MR transitions to positive. Notably, as layer thickness decreases, the coupling strength at the interface reduces, leading to a suppression of negative MR. Additionally, magnetodielectric measurements in the FLG/FePS$_3$/FLG heterostructure show an upturn at temperatures significantly below ($T_\text{N}$), suggesting a role for the magnon mode in capacitance, as indicated by hybridization between magnon and phonon bands in pristine FePS$_3$ \textit{via} magnetoelastic coupling.

cond-mat.mes-hall↗

arXiv2024

Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor

The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric and paraelectric phases plays crucial role in stabilizing of n-channel-conductance. This results into the emergence of a non-volatile logic state, between the two binary states of TFETs. Concerned study proposed NC-TFETs based on ferroionic crystals as promising devices for generating a stable logic state below Vth.

physics.app-ph↗

arXiv2023

Anisotropic Magnetodielectric Coupling in Layered Antiferromagnetic FePS$_3$

We report anisotropic magnetodielectric (MD) coupling in layered van der Waals (vdW) antiferromagnetic (AFM) FePS$_3$ (Néel temperature $T_{\mathrm{N}}$ $\sim$ 120K) with perpendicular anisotropy. Above $T_N$, while dielectric response function along \textit{c}-axis shows frequency dependent relaxations, in-plane data is frequency independent and reveals a deviation from phonon-anharmonicity in the ordered state, thereby implying a connection to spin-phonon coupling known to be indicative of onset of magnetic ordering. At low temperature (below 40 K), atypical anomaly in the dielectric constant is corroborated with temperature dependent DC and AC susceptibility. The magnetodielectric response across this anomaly differs significantly for both, in-plane and out-of-plane cases. We have explained this in terms of preferential orientation of magnetic AFM-z alignment, implied by the in-plane structural anisotropy as confirmed by \textit{ab-initio} calculations. Controlling relative strength of magnetodielectric coupling with magnetic anisotropy opens up a strategy for tracking subtle modifications of structure, such as in-plane anisotropy, with potential application to spintronic technologies.

cond-mat.mes-hall↗

arXiv2022

Coexistence of local structural heterogeneities and long-range ferroelectricity in Pb-free (1-x)Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 ceramics

Environmentally benign (1-x)Ba(Ti$_{0.8}$Zr$_{0.2}$)O$_3$-x(Ba$_{0.7}$Ca$_{0.3}$)TiO$_3$ (BZT-BCT) ceramics are promising materials due to their remarkable high piezoresponse [Liu and Ren, Phys. Rev. Lett. \textbf{103}, 257602 (2009)]. In this Letter, by focusing on local and average structure in combination with macroscopic electromechanical and dielectric measurements we demonstrate the structure property relationship in the tetragonal BZT-BCT ceramic. During high-temperature cubic to tetragonal phase transformation, polar nanoregions are manifested through the spontaneous volume ferroelectrostriction at temperatures below $\sim$ 477 K. Temperature-dependent local structural investigations across the Zr K edge extended x-ray absorption fine structure spectroscopy reveal an anomalous collaboration between the ZrO$_{6}$ and TiO$_6$ octahedra. These octahedra compromise their individuality during polarization development. The presence of domains of submicron size embedded inside the macroscopic ferroelectric regions below T$_{m}$, as well as their hierarchical arrangement, is observed by piezo-response force microscopy. Effects of the existence of the structural/polar heterogeneities below T$_{m}$ are observed also when polarizibilities of the poled and the unpoled samples are compared; the poled sample is found to be more susceptible to the electric field. In addition, by using electric field dependent x-ray diffraction studies we also show that this ceramic under field exhibits reduction of tetragonal distortion, which is consistent with earlier reports.

cond-mat.mtrl-sci↗

arXiv2022

Monoclinic symmetry at the nanoscale in lead-free ferroelectric BaZr$_{x}$Ti$_{1-x}$O$_{3}$ ceramics

Local structural symmetries play a key role in the functionalities of ferroelectric materials and are often found different from average symmetry. Here, we study the real space nanoscale structure in Pb-free BaZr$_{x}$Ti$_{1-x}$O$_{3}$ (x $\leq$ 0.10) by pair distribution function measurements, complemented by transmission electron microscopy and x-ray diffraction. Our observations show existence of the rhombohedrally distorted unit cells; however, at intermediate length scales, at least up to 5 nm, there exist nano-scale correlated regions of monoclinic symmetry. This is complemented by the observation of curved frustrated nanodomains. Further, the average structure is found to have coexisting monoclinic and rhombohedral symmetries. Our observation of a two-phase ferroelectric state is in contrast to interferroelectric instabilities of conventional polymorphic phase boundaries reported for doped BaTiO$_{3}$.

cond-mat.mtrl-sci↗