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arXiv · 2403.13387

Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well

A. V. Snegirev·V. M. Kovalev·M. V. Entin·E. B. Olshanetsky·N. N. Mikhailov·Z. D. Kvon
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Abstract

The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole scattering processes at low temperatures. We apply the Boltzmann transport equation approach to study the effect of electron-hole scattering in a semimetal QW. The calculated temperature behavior of 2D semimetal resistivity demonstrates an excellent agreement with experimental findings.

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A. V. Snegirev, V. M. Kovalev, M. V. Entin, E. B. Olshanetsky, N. N. Mikhailov, Z. D. Kvon. 2024-03-20. Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well. https://arxiv.org/abs/2403.13387

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