Band gap formation in commensurate twisted bilayer graphene/hBN moir\'e lattices

Alexander Rothstein; Christoph Schattauer; Robin J. Dolleman; Stefan Trellenkamp; Florian Lentz; Kenji Watanabe; Takashi Taniguchi; Dante M. Kennes; Bernd Beschoten; Christoph Stampfer; Florian Libisch

doi:10.1103/physrevb.109.155139

arXiv · 2403.14393

Band gap formation in commensurate twisted bilayer graphene/hBN moir\'e lattices

Alexander Rothstein·Christoph Schattauer·Robin J. Dolleman·Stefan Trellenkamp·Florian Lentz·Kenji Watanabe·Takashi Taniguchi·Dante M. Kennes·Bernd Beschoten·Christoph Stampfer·Florian Libisch

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Abstract

We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal that if the ratio of the resulting two moir\'e unit cell areas is a simple fraction, the graphene/hBN moir\'e lattice acts as a staggered potential, breaking the degeneracy between tBLG AA sites. This leads to additional band gaps at energies where a subset of tBLG AA sites is fully occupied. These gaps manifest as Landau fans in magnetotransport, which we experimentally observe in an aligned tBLG/hBN heterostructure. Our study demonstrates the identification of commensurate tBLG/hBN van-der-Waals heterostructures by magnetotransport, highlights the persistence of moir\'e effects on length scales of tens of nanometers, and represents an interesting step forward in the ongoing effort to realise designed quantum materials with tailored properties.

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Alexander Rothstein, Christoph Schattauer, Robin J. Dolleman, Stefan Trellenkamp, Florian Lentz, Kenji Watanabe, Takashi Taniguchi, Dante M. Kennes, Bernd Beschoten, Christoph Stampfer, Florian Libisch. 2024-03-21. Band gap formation in commensurate twisted bilayer graphene/hBN moir\'e lattices. https://doi.org/10.1103/physrevb.109.155139

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