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arXiv · 2404.01144

Electrical-controllable antiferromagnet-based tunnel junction

Lei Han·Xuming Luo·Yingqian Xu·Hua Bai·Wenxuan Zhu·Yuxiang Zhu·Guoqiang Yu·Cheng Song·Feng Pan
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Abstract

Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of interfacial exchange bias and exchange spring in IrMn. Encoding information states 0 and 1 is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring andexchange bias, 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrical-controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory.

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Lei Han, Xuming Luo, Yingqian Xu, Hua Bai, Wenxuan Zhu, Yuxiang Zhu, Guoqiang Yu, Cheng Song, Feng Pan. 2024-04-01. Electrical-controllable antiferromagnet-based tunnel junction. https://doi.org/10.1021/acs.nanolett.4c00084

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